Datasheet > ISA2191AT2

ISA2191AT2

更新时间： 2024-01-08 22:54:56

品牌	Logo	应用领域
谏早电子 - ISAHAYA		晶体晶体管
页数	文件大小	规格书
3页	143K
描述
Transistor

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中文翻译

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ISA2191AT2 数据手册

〈Transistor〉

ISA2191AT2

FOR LOW FREQUENCY AMPLIFY APPLICATION

SILICON PNP EPITAXIAL TYPE

DESCRIPTION

OUTLINE DRAWING

ISA2191AT2 is a super mini package resin sealed silicon PNP epitaxial

transistor,It is designed for low frequency application.

Since it is a super-thin flat lead type package,a high-density

mounting are possible.

Unit：ｍｍ

1.21±0.1

0.79±0.1

FEATURE

①

●Super-thin flat lead type package. t=0. 5mm

●Excellent linearly of DC forward current gain.

●Low collector to emitter saturation voltage

VCE(sat)=-0.3V max (@Ic=-100mA/IB=-10mA)

②

③

APPLICATION

For hybrid IC,small type machine low frequency voltage amplify

application

JEITA：─

ISAHAYA：T-USM

TERMINAL CONNECTER

①：BASE

MAXIMUM RATINGS(Ta=25℃)

Symbol

Parameter

Ratings

Unit

②：EMITTER

VCBO

VEBO

VCEO

Collector to Base voltage

Emitter to Base voltage

Collector to Emitter voltage

Collector current

-60

-6

③：COLLECTOR

-50

-150

℃

MARKING

Abbreviation for Kind

Collector dissipation

125（※）

125

hFE Item

Junction temperature

Storage temperature

Tstg

-55～125

７

Ｆ

※package mounted on 9×19×1mm glass-epoxy substrate.

A～F running No.

G～J Month of manufacture

電気的特性（Ta=25℃）

Parameter

Limits

Symbol

Test conditions

Unit

Min

-50

Min

Collector to Emitter Breakdown voltage

Collector cut off current

Emitter cut off current

V(BR)CEO I_C=-100μA, R _BE=∞

μA

ICBO

IEBO

hFE*

hFE

V _CB=-60V, I _E=0mA

V _EB=-6V, I _C=0mA

-0.1

500

DC forward current gain

_CE=-6V, I _C=-1mA

150

DC forward current gain

_CE=-6V, I _C=-100μA

C to E saturation voltage

Gain bandwidth product

VCE(sat) I_C=-100mA, I _B=-10mA

-0.3

_CE=-6V, I _E=10mA

200

3.0

MHz

Collector output capacitance

Cob

V _CB=-6V, I _E=0A, f=1MHz

※ It shows hFE classification in below table

Item

hFE

150～300

250～500

ISAHAYA ELECTRONICS CORPORATION

12 3

中文翻译

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