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ISA2188AM1 PDF预览

ISA2188AM1

更新时间: 2024-11-20 12:03:59
品牌 Logo 应用领域
谏早电子 - ISAHAYA 驱动
页数 文件大小 规格书
4页 151K
描述
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

ISA2188AM1 数据手册

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ISA2188AM1  
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION  
SILICON PNP EPITAXIAL TYPE  
Unit:mm  
OUTLINE DRAWING  
DESCRIPTION  
2.1  
ISA2188AM1 is a silicon PNP epitaxial type transistor  
Designed with high collector current, low VCE(sat).  
0.425 1.25 0.425  
FEATURE  
●High collector current  
IC(MAX)=-650mA  
●Low collector to emitter saturation voltage  
VCE(sat)<-0.7Vmax  
APPLICATION  
TERMINAL CONNECTOR  
①:BASE  
②:EMITTER  
For switching application, small type motor drive application.  
JEITA:SC-70  
JEDEC: -  
③:COLLECTOR  
MAXIMUM RATINGS(Ta=25℃)  
MARKING  
Symbol  
VCEO  
VCBO  
VEBO  
ICM  
Parameter  
Ratings  
-20  
Unit  
V
Collector to Emitter voltage  
Collector to Base voltage  
Emitter to Base voltage  
Peak collector current  
Collector current  
hFE ITEM  
Type Name  
-25  
V
-4  
V
-1000  
-650  
200  
mA  
mA  
mW  
・ A F  
IC  
PC  
Collector dissipation  
Junction temperature  
Storage temperature  
Tj  
150  
Tstg  
-55~150  
ELECTRICAL CHARACTERISTICS(Ta=25℃)  
Limits  
Typ  
Symbol  
Parameter  
Test condition  
Unit  
Min  
-20  
-25  
-4  
Max  
V(BR)CEO C to E break down voltage  
V(BR)CBO C to B break down voltage  
V(BR)EBO E to B break down voltage  
IC=-100uA, IB=0  
V
V
IC=-10uA, IE=0  
IE=-10uA, IC=0  
V
ICBO  
IEBO  
Collector cut off current  
Emitter cut off current  
DC forward current gain  
C to E saturation voltage  
Gain band width product  
VCB=-25V, IE=0  
-1  
-1  
uA  
uA  
-
VEB=-2V, IC=0  
hFE※  
VCE(sat)  
fT  
IC=-100mA, VCE=-4V  
IC=-500mA, IB=-25mA  
IE=10mA, VCE=-6V,f=100MHz  
150  
800  
-0.7  
-0.3  
210  
V
MHz  
*:It shows hFE classification in below table.  
ITEM  
hFE  
E
F
G
150~300 250~500 400~800  
ISAHAYA ELECTRONICS CORPORATION  

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