Datasheet > ISA2188AM1

ISA2188AM1

更新时间： 2024-01-21 20:56:43

品牌	Logo	应用领域
谏早电子 - ISAHAYA		驱动
页数	文件大小	规格书
4页	151K
描述
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

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ISA2188AM1 数据手册

ISA2188AM1

FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION

SILICON PNP EPITAXIAL TYPE

Unit：mm

OUTLINE DRAWING

DESCRIPTION

2.1

ISA2188AM1 is a silicon PNP epitaxial type transistor

Designed with high collector current, low V_CE(sat).

0.425 1.25 0.425

①

②

③

FEATURE

●High collector current

I_C（MAX）=-650mA

●Low collector to emitter saturation voltage

V_CE（sat）<-0.7V_max

APPLICATION

TERMINAL CONNECTOR

①：BASE

②：EMITTER

For switching application, small type motor drive application.

JEITA：SC-70

JEDEC：－

③：COLLECTOR

MAXIMUM RATINGS（Ta=25℃）

MARKING

Symbol

V_CEO

V_CBO

V_EBO

I_CM

Parameter

Ratings

-20

Unit

Collector to Emitter voltage

Collector to Base voltage

Emitter to Base voltage

Peak collector current

Collector current

hFE ITEM

Type Name

-25

-4

-1000

-650

200

℃

・ A F

I_C

P_C

Collector dissipation

Junction temperature

Storage temperature

T_j

150

T_stg

-55～150

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Limits

Typ

Symbol

Parameter

Test condition

Unit

Min

-20

-25

-4

Max

V_（BR）CEOC to E break down voltage

V_（BR）CBOC to B break down voltage

V_（BR）EBOE to B break down voltage

IC=-100uA, IB=0

IC=-10uA, IE=0

IE=-10uA, IC=0

I_CBO

I_EBO

Collector cut off current

Emitter cut off current

DC forward current gain

C to E saturation voltage

Gain band width product

VCB=-25V, IE=0

-1

VEB=-2V, IC=0

h_FE※

V_CE（sat）

f_T

IC=-100mA, VCE=-4V

IC=-500mA, IB=-25mA

IE=10mA, VCE=-6V,f=100MHz

150

800

-0.7

-0.3

210

MHz

*：It shows hFE classification in below table.

ITEM

hFE

150～300 250～500 400～800

ISAHAYA ELECTRONICS CORPORATION

12 3 4

中文翻译

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