Datasheet > ISA2188AU1

ISA2188AU1

更新时间： 2024-11-24 12:31:15

品牌	Logo	应用领域
谏早电子 - ISAHAYA		驱动
页数	文件大小	规格书
4页	163K
描述
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

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ISA2188AU1 数据手册

ISA2188AU1

PRELIMINARY

※This datasheet is possibility of change.

FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION

Because this device is developing now.

SILICON PNP EPITAXIAL TYPE

Unit：mm

OUTLINE DRAWING

DESCRIPTION

1.5

0.8

ISA2188AU1 is a silicon PNP epitaxial type transistor

Designed with high collector current, low V_CE(sat).

0.35

①

②

FEATURE

③

●High collector current

I_C（MAX）=-650mA

●Low collector to emitter saturation voltage

V_CE（sat）<-0.7V_max

APPLICATION

TERMINAL CONNECTOR

①：BASE

②：EMITTER

For switching application, small type motor drive application.

JEITA：SC-75A

JEDEC：－

③：COLLECTOR

MAXIMUM RATINGS（Ta=25℃）

MARKING

Symbol

V_CEO

V_CBO

V_EBO

I_CM

Parameter

Ratings

-20

Unit

Collector to Emitter voltage

Collector to Base voltage

Emitter to Base voltage

Peak collector current

Collector current

hFE ITEM

Type Name

-25

-4

-1000

-650

150

℃

・ A F

I_C

P_C

Collector dissipation

Junction temperature

Storage temperature

T_j

150

T_stg

-55～150

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Limits

Typ

－

Symbol

Parameter

Test condition

Unit

Max

Min

-20

-25

-4

V_（BR）CEOC to E break down voltage

V_（BR）CBOC to B break down voltage

V_（BR）EBOE to B break down voltage

I_C=-100uA, I_B=0

－

I_C=-10uA, I_E=0

－

I_E=-10uA, I_C=0

－

I_CBO

I_EBO

Collector cut off current

Emitter cut off current

DC forward current gain

C to E saturation voltage

Gain band width product

V_CB=-25V, I_E=0

－

-1

－

V_EB=-2V, I_C=0

－

-1

h_FE※

V_CE（sat）

f_T

I_C=-100mA, V_CE=-4V

I_C=-500mA, I_B=-25mA

I_E=10mA, V_CE=-6V,f=100MHz

150

－

800

-0.7

－

-0.3

210

－

MHz

*：It shows hFE classification in below table.

ITEM

hFE

150～300 250～500 400～800

ISAHAYA ELECTRONICS CORPORATION

12 3 4

中文翻译

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