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IS66WV51216BLL-55BLI PDF预览

IS66WV51216BLL-55BLI

更新时间： 2024-09-26 12:31:15
品牌 Logo 应用领域
美国芯成 - ISSI 存储内存集成电路静态存储器
页数 文件大小 规格书
16页 500K
描述
8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM

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中文翻译

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IS66WV51216BLL-55BLI 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：BGA
包装说明：TFBGA, BGA48,6X8,30针数：48
Reach Compliance Code：compliantECCN代码：3A991.B.2.A
HTS代码：8542.32.00.41风险等级：5.6
Is Samacsys：N最长访问时间：55 ns
I/O 类型：COMMONJESD-30 代码：R-PBGA-B48
JESD-609代码：e1长度：8 mm
内存密度：8388608 bit内存集成电路类型：PSEUDO STATIC RAM
内存宽度：16湿度敏感等级：3
功能数量：1端子数量：48
字数：524288 words字数代码：512000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：512KX16
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：TFBGA封装等效代码：BGA48,6X8,30
封装形状：RECTANGULAR封装形式：GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行：PARALLEL峰值回流温度（摄氏度）：260
电源：3/3.3 V认证状态：Not Qualified
座面最大高度：1.2 mm最大待机电流：0.0001 A
子类别：Other Memory ICs最大压摆率：0.025 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.5 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Tin/Silver/Copper (Sn/Ag/Cu)端子形式：BALL
端子节距：0.75 mm端子位置：BOTTOM
处于峰值回流温度下的最长时间：40宽度：6 mm
Base Number Matches：1

IS66WV51216BLL-55BLI 数据手册

 浏览型号IS66WV51216BLL-55BLI的Datasheet PDF文件第2页浏览型号IS66WV51216BLL-55BLI的Datasheet PDF文件第3页浏览型号IS66WV51216BLL-55BLI的Datasheet PDF文件第4页浏览型号IS66WV51216BLL-55BLI的Datasheet PDF文件第5页浏览型号IS66WV51216BLL-55BLI的Datasheet PDF文件第6页浏览型号IS66WV51216BLL-55BLI的Datasheet PDF文件第7页 
fabricatedusingISSI's  
                                                                     
high-performance  
                                                                                  
CMOStechnology.ꢀ  
                                                                                       
IS66WV51216ALL  
IS66WV51216BLL  
8Mb LOW VOLTAGE,  
ULTRA LOW POWER PSEUDO CMOS STATIC RAM  
JANUARY 2010  
FEATURES  
DESCRIPTION  
•ꢀ High-speedꢀaccessꢀtime:ꢀꢀ55ns  
•ꢀ CMOSꢀlowꢀpowerꢀoperation  
– mW (typical) operating  
Theꢀ ISSIꢀ IS66WV51216ALL/BLLꢀ isꢀ aꢀ high-speed,ꢀ 8Mꢀ  
bitꢀstaticꢀRAMsꢀorganizedꢀasꢀ512Kꢀwordsꢀbyꢀ16ꢀbits.ꢀItꢀisꢀ  
Thisꢀhighlyꢀreliableꢀprocessꢀcoupledꢀwithꢀinnovativeꢀcircuitꢀ  
designꢀtechniques,ꢀyieldsꢀhigh-performanceꢀandꢀlowꢀpowerꢀ  
consumption devices.  
ꢀ –ꢀꢀµWꢀ(typical)ꢀCMOSꢀstandby  
•ꢀ Singleꢀpowerꢀsupplyꢀꢀ  
When CS1ꢀisꢀHIGHꢀ(deselected)ꢀorꢀwhenꢀCS2ꢀisꢀLOW  
(deselected) or when CS1 is LOW, CS2 is HIGH and both  
LBandUBꢀareꢀHIGH,ꢀtheꢀdeviceꢀassumesꢀaꢀstandbyꢀmodeꢀ  
at which the power dissipation can be reduced down with  
CMOSꢀinputꢀlevels.  
ꢀ –ꢀ1.7V--1.95VꢀVd d (66WV51216ALL) (70ns)  
ꢀ –ꢀ2.5V--3.6VꢀVd d (66WV51216BLL) (55ns)  
•ꢀ Threeꢀstateꢀoutputs  
•ꢀ Dataꢀcontrolꢀforꢀupperꢀandꢀlowerꢀbytes  
•ꢀ Industrialꢀtemperatureꢀavailableꢀ  
•ꢀ Lead-freeꢀavailableꢀ  
Easy memory expansion is provided by using Chip Enable  
andꢀOutputꢀEnableꢀinputs.ꢀTheꢀactiveꢀLOWꢀWriteꢀEnableꢀ  
(WE) controls both writing and reading of the memory. A  
dataꢀbyteꢀallowsꢀUpperꢀByteꢀ(UB)ꢀandꢀLowerꢀByteꢀ(LB)  
access.  
TheꢀIS66WV51216ALL/BLLꢀisꢀpackagedꢀinꢀtheꢀJEDECꢀ  
standardꢀ48-pinꢀminiꢀBGAꢀ(6mmꢀxꢀ8mm)ꢀandꢀ44-PinꢀTSOPꢀ  
(TYPEꢀII).ꢀTheꢀdeviceꢀisꢀasloꢀavailableꢀforꢀdieꢀsales.  
FUNCTIONAL BLOCK DIAGRAM  
512K x 16  
MEMORY ARRAY  
A0-A18  
DECODER  
V
DD  
GND  
I/O0-I/O7  
Lower Byte  
I/O  
DATA  
COLUMN I/O  
CIRCUIT  
I/O8-I/O15  
Upper Byte  
CS2  
CS1  
OE  
CONTROL  
CIRCUIT  
WE  
UB  
LB  
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no  
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on  
any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — www.issi.com  
1
Rev. A  
12/02/09  
1234567...16

中文翻译

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与IS66WV51216BLL-55BLI相关器件

型号 品牌 获取价格 描述 数据表
IS66WV51216BLL-55TLI ISSI

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 		8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV51216DALL ISSI

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 		8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV51216DALL-70BLI ISSI

获取价格

 		Pseudo Static RAM, 512KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, BGA-48
IS66WV51216DALL-70BLI-TR ISSI

获取价格

 		Application Specific SRAM, 512KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, BGA-4
IS66WV51216DBLL-55BLI ISSI

获取价格

 		Pseudo Static RAM, 512KX16, 55ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, BGA-48
IS66WV51216DBLL-55BLI-TR ISSI

获取价格

 		Application Specific SRAM, 512KX16, 55ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, BGA-4
IS66WV51216DBLL-55TLI ISSI

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 		Pseudo Static RAM, 512KX16, 55ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44
IS66WV51216DBLL-55TLI-TR ISSI

获取价格

 		Application Specific SRAM, 512KX16, 55ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44
IS66WV51216DBLL-70BLI ISSI

获取价格

 		Pseudo Static RAM, 512KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, BGA-48
IS66WV51216DBLL-70TLI ISSI

获取价格

 		Pseudo Static RAM, 512KX16, 70ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44

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