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IS65WV12816BLL-70BA PDF预览

IS65WV12816BLL-70BA

更新时间: 2024-02-10 07:02:16
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器内存集成电路
页数 文件大小 规格书
19页 103K
描述
Standard SRAM, 128KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48

IS65WV12816BLL-70BA 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active零件包装代码:BGA
包装说明:TFBGA, BGA48,6X8,30针数:48
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.59
Is Samacsys:N最长访问时间:70 ns
I/O 类型:COMMONJESD-30 代码:R-PBGA-B48
JESD-609代码:e0长度:8 mm
内存密度:2097152 bit内存集成电路类型:STANDARD SRAM
内存宽度:16湿度敏感等级:3
功能数量:1端子数量:48
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:128KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA48,6X8,30
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:2.5/3.3 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.000015 A
最小待机电流:1.2 V子类别:SRAMs
最大压摆率:0.02 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.5 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:BALL端子节距:0.75 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:6 mmBase Number Matches:1

IS65WV12816BLL-70BA 数据手册

 浏览型号IS65WV12816BLL-70BA的Datasheet PDF文件第1页浏览型号IS65WV12816BLL-70BA的Datasheet PDF文件第2页浏览型号IS65WV12816BLL-70BA的Datasheet PDF文件第4页浏览型号IS65WV12816BLL-70BA的Datasheet PDF文件第5页浏览型号IS65WV12816BLL-70BA的Datasheet PDF文件第6页浏览型号IS65WV12816BLL-70BA的Datasheet PDF文件第7页 
®
IS65WV12816ALL, IS65WV12816BLL  
ISSI  
TRUTH TABLE  
I/O PIN  
Mode  
WE CS1 CS2  
OE  
LB  
UB  
I/O0-I/O7  
I/O8-I/O15 VddCurrent  
Not Selected  
X
X
X
H
X
X
X
L
X
X
X
X
X
X
H
X
X
H
High-Z  
High-Z  
High-Z  
High-Z  
High-Z  
High-Z  
ISB1, ISB2  
ISB1, ISB2  
ISB1, ISB2  
OutputDisabled  
Read  
H
H
L
L
H
H
H
H
L
X
X
L
High-Z  
High-Z  
High-Z  
High-Z  
ICC  
ICC  
H
H
H
L
L
L
H
H
H
L
L
L
L
H
L
H
L
L
DOUT  
High-Z  
DOUT  
High-Z  
DOUT  
DOUT  
ICC  
Write  
L
L
L
L
L
L
H
H
H
X
X
X
L
H
L
H
L
L
DIN  
High-Z  
DIN  
High-Z  
DIN  
DIN  
ICC  
ABSOLUTE MAXIMUM RATINGS(1)  
Symbol  
VTERM  
TSTG  
Parameter  
Value  
–0.2 to VDD+0.3  
–65 to +150  
1.0  
Unit  
Terminal Voltage with Respect to GND  
Storage Temperature  
V
°C  
W
PT  
Power Dissipation  
Note:  
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a  
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational  
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect  
reliability.  
OPERATING RANGE (VDD)  
Option  
A
AmbientTemperature  
0°C to +70°C  
IS65WV12816ALL  
1.65V - 2.2V  
IS65WV12816BLL  
2.5V - 3.6V  
A1  
–40°Cto+85°C  
1.65V - 2.2V  
2.5V - 3.6V  
A2  
A3  
–40°Cto+105°C  
–40°Cto+125°C  
1.65V - 2.2V  
1.65V - 2.2V  
2.5V - 3.6V  
2.5V - 3.6V  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. 00D  
3
02/05/03  

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