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IS61LV6464-6PQ PDF预览

IS61LV6464-6PQ

更新时间： 2024-02-27 06:53:09
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
19页 130K
描述
64K x 64 SYNCHRONOUS PIPELINE STATIC RAM

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IS61LV6464-6PQ 技术参数

是否无铅：含铅是否Rohs认证：不符合
生命周期：Obsolete零件包装代码：QFP
包装说明：14 X 20 MM, TQFP-128针数：128
Reach Compliance Code：compliantECCN代码：3A991.B.2.A
HTS代码：8542.32.00.41风险等级：5.87
Is Samacsys：N最长访问时间：6 ns
其他特性：SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE最大时钟频率 (fCLK)：83 MHz
I/O 类型：COMMONJESD-30 代码：R-PQFP-G128
JESD-609代码：e0长度：20 mm
内存密度：4194304 bit内存集成电路类型：CACHE SRAM
内存宽度：64湿度敏感等级：3
功能数量：1端子数量：128
字数：65536 words字数代码：64000
工作模式：SYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：64KX64
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：LFQFP封装等效代码：QFP128,.63X.87,20
封装形状：RECTANGULAR封装形式：FLATPACK, LOW PROFILE, FINE PITCH
并行/串行：PARALLEL峰值回流温度（摄氏度）：NOT SPECIFIED
电源：2.5,3.3 V认证状态：Not Qualified
座面最大高度：1.6 mm最大待机电流：0.005 A
最小待机电流：3.14 V子类别：SRAMs
最大压摆率：0.2 mA最大供电电压 (Vsup)：3.63 V
最小供电电压 (Vsup)：3.135 V标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子节距：0.5 mm
端子位置：QUAD处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：14 mmBase Number Matches：1

IS61LV6464-6PQ 数据手册

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®
IS61LV6464  
ISSI  
JANUARY 2004  
64K x 64 SYNCHRONOUS  
PIPELINE STATIC RAM  
FEATURES  
DESCRIPTION  
TheISSIIS61LV6464isahigh-speed,low-powersynchronous  
staticRAMdesignedtoprovideaburstable,high-performance,  
secondarycacheforthePentium™,680X0™,andPowerPC™  
microprocessors. It is organized as 65,536 words by 64 bits,  
fabricatedwithISSI'sadvancedCMOStechnology.Thedevice  
integrates a 2-bit burst counter, high-speed SRAM core, and  
high-drive capability outputs into a single monolithic circuit. All  
synchronous inputs pass through registers controlled by a  
positive-edge-triggeredsingleclockinput.  
• Fast access time:  
– -100 MHz; 6 ns-83 MHz  
• Internal self-timed write cycle  
• Individual Byte Write Control and Global Write  
• Clock controlled, registered address, data and  
control  
• Pentium™ or linear burst sequence control  
using MODE input  
Write cycles are internally self-timed and are initiated by the  
rising edge of the clock input. Write cycles can be from one to  
eight bytes wide as controlled by the write control inputs.  
• Five chip enables for simple depth expansion  
and address pipelining  
• Common data inputs and data outputs  
• Power-down control by ZZ input  
• JEDEC 128-Pin TQFP 14mm x 20mm  
package  
Separatebyteenablesallowindividualbytestobewritten.BW1  
controls I/O1-I/O8, BW2 controls I/O9-I/O16, BW3 controls I/  
O17-I/O24, BW4 controls I/O25-I/O32, BW5 controls  
I/O33-I/O40,BW6controlsI/O41-I/O48,BW7controlsI/O49-I/  
O56, BW8 controls I/O57-I/O64, conditioned by BWE being  
LOW. A LOW on GW input would cause all bytes to be written.  
• Single +3.3V power supply  
• 2.5V VDDQ (I/O supply)  
• Control pins mode upon power-up:  
– MODE in interleave burst mode  
– ZZ in normal operation mode  
Bursts can be initiated with either ADSP (Address Status  
Processor) or ADSC (Address Status Cache Controller) input  
pins.Subsequentburstaddressescanbegeneratedinternally  
by the IS61LV6464 and controlled by the ADV (burst address  
advance) input pin.  
These control pins can be connected to GNDQ  
or VDDQ to alter their power-up state  
Asynchronoussignalsincludeoutputenable(OE),sleepmode  
input(ZZ), andburstmodeinput(MODE). AHIGHinputonthe  
ZZ pin puts the SRAM in the power-down state. When ZZ is  
pulledLOW(ornoconnect),theSRAMnormallyoperatesafter  
the wake-up period. A LOW input, i.e., GNDQ, on MODE pin  
selects LINEAR Burst. A VDDQ (or no connect) on MODE pin  
selects INTERLEAVED Burst.  
Copyright © 2004 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — 1-800-379-4774  
Rev. B  
1
01/15/04  
1234567...19

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与IS61LV6464-6PQ相关器件

型号 品牌 获取价格 描述 数据表
IS61LV6464-6PQI ETC

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 		x64 Fast Synchronous SRAM
IS61LV6464-6TQ ETC

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 		64K x 64 SYNCHRONOUS PIPELINE STATIC RAM
IS61LV6464-6TQI ETC

获取价格

 		x64 Fast Synchronous SRAM
IS61LV6464-7PQ ETC

获取价格

 		x64 Fast Synchronous SRAM
IS61LV6464-7PQI ETC

获取价格

 		x64 Fast Synchronous SRAM
IS61LV6464-7TQ ETC

获取价格

 		x64 Fast Synchronous SRAM
IS61LV6464-7TQI ETC

获取价格

 		x64 Fast Synchronous SRAM
IS61LV6464-8PQ ETC

获取价格

 		x64 Fast Synchronous SRAM
IS61LV6464-8PQI ETC

获取价格

 		x64 Fast Synchronous SRAM
IS61LV6464-8TQ ETC

获取价格

 		x64 Fast Synchronous SRAM

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