Datasheet > IS61LV6464-6PQ

IS61LV6464-6PQ

更新时间： 2024-11-17 23:01:19

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
19页	130K
描述
64K x 64 SYNCHRONOUS PIPELINE STATIC RAM

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IS61LV6464-6PQ 数据手册

IS61LV6464

ISSI

JANUARY 2004

64K x 64 SYNCHRONOUS

PIPELINE STATIC RAM

FEATURES

DESCRIPTION

TheISSIIS61LV6464isahigh-speed,low-powersynchronous

staticRAMdesignedtoprovideaburstable,high-performance,

secondarycacheforthePentium™,680X0™,andPowerPC™

microprocessors. It is organized as 65,536 words by 64 bits,

fabricatedwithISSI'sadvancedCMOStechnology.Thedevice

integrates a 2-bit burst counter, high-speed SRAM core, and

high-drive capability outputs into a single monolithic circuit. All

synchronous inputs pass through registers controlled by a

positive-edge-triggeredsingleclockinput.

• Fast access time:

– -100 MHz; 6 ns-83 MHz

• Internal self-timed write cycle

• Individual Byte Write Control and Global Write

• Clock controlled, registered address, data and

control

• Pentium™ or linear burst sequence control

using MODE input

Write cycles are internally self-timed and are initiated by the

rising edge of the clock input. Write cycles can be from one to

eight bytes wide as controlled by the write control inputs.

• Five chip enables for simple depth expansion

and address pipelining

• Common data inputs and data outputs

• Power-down control by ZZ input

• JEDEC 128-Pin TQFP 14mm x 20mm

package

Separatebyteenablesallowindividualbytestobewritten.BW1

controls I/O1-I/O8, BW2 controls I/O9-I/O16, BW3 controls I/

O17-I/O24, BW4 controls I/O25-I/O32, BW5 controls

I/O33-I/O40,BW6controlsI/O41-I/O48,BW7controlsI/O49-I/

O56, BW8 controls I/O57-I/O64, conditioned by BWE being

LOW. A LOW on GW input would cause all bytes to be written.

• Single +3.3V power supply

• 2.5V V^DDQ(I/O supply)

• Control pins mode upon power-up:

– MODE in interleave burst mode

– ZZ in normal operation mode

Bursts can be initiated with either ADSP (Address Status

Processor) or ADSC (Address Status Cache Controller) input

pins.Subsequentburstaddressescanbegeneratedinternally

by the IS61LV6464 and controlled by the ADV (burst address

advance) input pin.

These control pins can be connected to GNDQ

or VDDQ to alter their power-up state

Asynchronoussignalsincludeoutputenable(OE),sleepmode

input(ZZ), andburstmodeinput(MODE). AHIGHinputonthe

ZZ pin puts the SRAM in the power-down state. When ZZ is

pulledLOW(ornoconnect),theSRAMnormallyoperatesafter

the wake-up period. A LOW input, i.e., GND^Q, on MODE pin

selects LINEAR Burst. A VDDQ (or no connect) on MODE pin

selects INTERLEAVED Burst.

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. B

01/15/04

12 3 4 5 6 7...19

中文翻译

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与IS61LV6464-6PQ相关器件

型号	品牌	获取价格	描述	数据表
IS61LV6464-6PQI	ETC	获取价格	x64 Fast Synchronous SRAM
IS61LV6464-6TQ	ETC	获取价格	64K x 64 SYNCHRONOUS PIPELINE STATIC RAM
IS61LV6464-6TQI	ETC	获取价格	x64 Fast Synchronous SRAM
IS61LV6464-7PQ	ETC	获取价格	x64 Fast Synchronous SRAM
IS61LV6464-7PQI	ETC	获取价格	x64 Fast Synchronous SRAM
IS61LV6464-7TQ	ETC	获取价格	x64 Fast Synchronous SRAM
IS61LV6464-7TQI	ETC	获取价格	x64 Fast Synchronous SRAM
IS61LV6464-8PQ	ETC	获取价格	x64 Fast Synchronous SRAM
IS61LV6464-8PQI	ETC	获取价格	x64 Fast Synchronous SRAM
IS61LV6464-8TQ	ETC	获取价格	x64 Fast Synchronous SRAM

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