®
IS61NF12832 IS61NF12836 IS61NF25618
IS61NLF12832 IS61NLF12836 IS61NLF25618 ISSI
128K x 32, 128K x 36 and 256K x 18
FLOW-THROUGH 'NO WAIT' STATE BUS
NOVEMBER 2002
SRAM
FEATURES
DESCRIPTION
The 4 Meg 'NF' product family feature high-speed,
low-power synchronous static RAMs designed to provide
a burstable, high-performance, 'no wait' state, device for
network and communications customers. They are
organized as 131,072 words by 32 bits, 131,072 words
by 36 bits and 262,144 words by 18 bits, fabricated with
ISSI's advanced CMOS technology.
• 100 percent bus utilization
• No wait cycles between Read and Write
• Internal self-timed write cycle
• Individual Byte Write Control
• Single R/W (Read/Write) control pin
• Clock controlled, registered address,
data and control
Incorporating a 'no wait' state feature, wait cycles are
eliminated when the bus switches from read to write, or
write to read. This device integrates a 2-bit burst counter,
high-speed SRAM core, and high-drive capability outputs
into a single monolithic circuit.
• Interleaved or linear burst sequence control
using MODE input
• Three chip enables for simple depth expansion
and address pipelining for TQFP
Allsynchronousinputspassthroughregistersarecontrolled
byapositive-edge-triggeredsingleclockinput.Operations
may be suspended and all synchronous inputs ignored
when Clock Enable, CKE is HIGH. In this state the internal
device will hold their previous values.
• Power Down mode
• Common data inputs and data outputs
• CKE pin to enable clock and suspend operation
• JEDEC 100-pin TQFP, 119 PBGA package
• Single +3.3V power supply (± 5%)
• NF Version: 3.3V I/O Supply Voltage
• NLF Version: 2.5V I/O Supply Voltage
• Industrialtemperatureavailable
All Read, Write and Deselect cycles are initiated by the
ADV input. When the ADV is HIGH the internal burst
counter is incremented. New external addresses can be
loaded when ADV is LOW.
Write cycles are internally self-timed and are initiated by
the rising edge of the clock inputs and when WE is LOW.
Separate byte enables allow individual bytes to be written.
A burst mode pin (MODE) defines the order of the burst
sequence.WhentiedHIGH,theinterleavedburstsequence
is selected. When tied LOW, the linear burst sequence is
selected.
FAST ACCESS TIME
Symbol
tKQ
Parameter
-8.5
8.5
10
-9
9
-10
10
12
83
Units
ns
Clock Access Time
Cycle Time
tKC
12
83
ns
Frequency
100
MHz
ISSIreservestherighttomakechangesthisspecificationhereinanditproductsatanytimewithoutnotice. ISSIassumesnoresponsibilityorliabilityarisingoutoftheapplicationoruseofanyinformation,
productorservicesdescribedherein.Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonanypublishedinformationandbeforeplacingordersforproducts.
©Copyright2000,IntegratedSiliconSolution,Inc
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
1
11/11/02