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IS61LPS51218J-225BI PDF预览

IS61LPS51218J-225BI

更新时间: 2024-11-21 09:37:15
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器
页数 文件大小 规格书
29页 174K
描述
Cache SRAM, 512KX18, 2.8ns, CMOS, PBGA119, PLASTIC, BGA-119

IS61LPS51218J-225BI 数据手册

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IS61LPS25632T/D/J  
IS61LPS25636T/D/J  
IS61LPS51218T/DJ  
®
ISSI  
256K x 32, 256K x 36, 512K x 18  
SYNCHRONOUS PIPELINED,  
APRIL 2003  
SINGLE-CYCLE DESELECT STATIC RAM  
DESCRIPTION  
FEATURES  
The ISSI IS61LPS25632T/D/J,IS61LPS25636T/D/J,and  
IS61LPS51218T/D/J are high-speed, low-power synchro-  
nous static RAMs designed to provide burstable, high-  
performance memory for communication and networking  
applications. The IS61LPS25632T/D/J is organized as  
262,144 words by 32 bits and the IS61LPS25636T/D/J is  
organizedas262,144wordsby36bits.TheIS61LPS51218T/  
D/J is organized as 524,288 words by 18 bits. Fabricated  
with ISSI's advanced CMOS technology, the device inte-  
grates a 2-bit burst counter, high-speed SRAM core, and  
high-drivecapabilityoutputsintoasinglemonolithiccircuit.  
Allsynchronousinputspassthroughregisterscontrolledby  
a positive-edge-triggered single clock input.  
• Internal self-timed write cycle  
• Individual Byte Write Control and Global Write  
• Clock controlled, registered address, data and  
control  
• Linear burst sequence control using MODE  
input  
Three chip enable option for simple depth  
expansion and address pipelining  
• Common data inputs and data outputs  
• JEDEC 100-Pin TQFP and  
119-pin PBGA package  
Writecyclesareinternallyself-timedandareinitiatedbythe  
risingedgeoftheclockinput.Writecyclescanbeonetofour  
bytes wide as controlled by the write control inputs.  
• Power Supply  
+3.3V VDD  
Separate byte enables allow individual bytes to be written.  
Bytewriteoperationisperformedbyusingbytewriteenable  
(BWE). Input combined with one or more individual byte  
write signals (BWx). In addition, Global Write (GW) is  
available for writing all bytes at one time, regardless of the  
byte write controls.  
+3.3V or 2.5 VDDQ (I/O)  
• Auto Power-down during deselect  
• Single cycle deselect  
• Snooze MODE for reduced-power standby  
• JTAG Boundary Scan for PBGA package  
• T Version (three chips selects)  
• D Version (two chips selects)  
• J Version (PBGA Package with JTAG)  
Bursts can be initiated with either ADSP (Address Status  
Processor) or ADSC (Address Status Cache Controller)  
input pins. Subsequent burst addresses can be generated  
internally and controlled by the ADV (burst address ad-  
vance) input pin.  
The mode pin is used to select the burst sequence order,  
Linear burst is achieved when this pin is tied LOW. Inter-  
leave burst is achieved when this pin is tied HIGH or left  
floating.  
FAST ACCESS TIME  
Symbol  
tKQ  
Parameter  
-250  
2.6  
4
-225  
2.8  
-200  
3.1  
5
-166  
3.5  
6
Units  
ns  
Clock Access Time  
Cycle Time  
tKC  
4.4  
ns  
Frequency  
250  
225  
200  
166  
MHz  
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to  
obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. A  
1
04/01/03  

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IS61LPS51236-250B2 ISSI

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IS61LPS51236-250B2I ISSI

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IS61LPS51236-250B3I ISSI

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IS61LPS51236A ISSI

获取价格

256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC
IS61LPS51236A-200B2 ISSI

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256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC