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IS43TR16128A-125KBLI PDF预览

IS43TR16128A-125KBLI

更新时间： 2024-10-27 12:04:19
品牌 Logo 应用领域
美国芯成 - ISSI 动态存储器双倍数据速率
页数 文件大小 规格书
81页 3393K
描述
256Mx8, 128Mx16 2Gb DDR3 SDRAM

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IS43TR16128A-125KBLI 数据手册

 浏览型号IS43TR16128A-125KBLI的Datasheet PDF文件第2页浏览型号IS43TR16128A-125KBLI的Datasheet PDF文件第3页浏览型号IS43TR16128A-125KBLI的Datasheet PDF文件第4页浏览型号IS43TR16128A-125KBLI的Datasheet PDF文件第5页浏览型号IS43TR16128A-125KBLI的Datasheet PDF文件第6页浏览型号IS43TR16128A-125KBLI的Datasheet PDF文件第7页 
IS43/46TR16128A, IS43/46TR16128AL,  
IS43/46TR82560A, IS43/46TR82560AL  
256Mx8, 128Mx16 2Gb DDR3 SDRAM  
AUGUST 2013  
FEATURES  
Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  
Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V  
Refresh Interval:  
7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C  
3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C  
High speed data transfer rates with system  
frequency up to 933 MHz  
Partial Array Self Refresh  
8 internal banks for concurrent operation  
8n-Bit pre-fetch architecture  
Asynchronous RESET pin  
TDQS (Termination Data Strobe) supported (x8  
only)  
Programmable CAS Latency  
Programmable Additive Latency: 0, CL-1,CL-2  
OCD (Off-Chip Driver Impedance Adjustment)  
Dynamic ODT (On-Die Termination)  
Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)  
Write Leveling  
Programmable CAS WRITE latency (CWL) based  
on tCK  
Programmable Burst Length: 4 and 8  
Programmable Burst Sequence: Sequential or  
Interleave  
Operating temperature:  
Commercial (TC = 0°C to +95°C)  
Industrial (TC = -40°C to +95°C)  
Automotive, A1 (TC = -40°C to +95°C)  
Automotive, A2 (TC = -40°C to +105°C)  
BL switch on the fly  
Auto Self Refresh(ASR)  
Self Refresh Temperature(SRT)  
ADDRESS TABLE  
Parameter  
OPTIONS  
256Mx8  
A0-A14  
A0-A9  
BA0-2  
1KB  
128Mx16  
A0-A13  
A0-A9  
BA0-2  
2KB  
Configuration:  
Row Addressing  
Column Addressing  
Bank Addressing  
256Mx8  
128Mx16  
Package:  
Page size  
Auto Precharge  
Addressing  
96-ball FBGA (9mm x 13mm) for x16  
78-ball FBGA (8mm x 10.5mm) for x8  
A10/AP  
A10/AP  
BL switch on the fly  
A12/BC#  
A12/BC#  
SPEED BIN  
Speed Option  
187F  
15H  
125K  
107M  
Units  
JEDEC Speed Grade  
DDR3-1066F  
DDR3-1333H  
DDR3-1600K  
DDR3-1866M  
CL-nRCD-nRP  
tRCD,tRP(min)  
7-7-7  
13.125  
9-9-9  
13.125  
11-11-11  
13.125  
13-13-13  
13.91  
tCK  
ns  
Note: Faster speed options are backward compatible to slower speed options.  
Copyright © 2013 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time  
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised  
to obtain the latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product  
can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use  
in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:  
a.) the risk of injury or damage has been minimized;  
b.) the user assume all such risks; and  
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances  
Integrated Silicon Solution, Inc. – www.issi.com –  
1
Rev. B1  
8/08/2013  
1234567...81

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IS43TR16128A-125KBLI 替代型号

型号 品牌 替代类型 描述 数据表
IS46TR16128A-125KBLA1 ISSI

完全替代

 256Mx8, 128Mx16 2Gb DDR3 SDRAM
IS43TR16128A-125KBL ISSI

类似代替

 256Mx8, 128Mx16 2Gb DDR3 SDRAM
IS46TR16128A-125KBLA2 ISSI

功能相似

 256Mx8, 128Mx16 2Gb DDR3 SDRAM

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