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IS43DR81280-25DBLI PDF预览

IS43DR81280-25DBLI

更新时间： 2024-11-25 06:37:39
品牌 Logo 应用领域
美国芯成 - ISSI 动态存储器双倍数据速率
页数 文件大小 规格书
28页 857K
描述
DDR DRAM, 64MX8, 0.4ns, CMOS, PBGA60, LEAD FREE, FBGA-60

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IS43DR81280-25DBLI 数据手册

 浏览型号IS43DR81280-25DBLI的Datasheet PDF文件第2页浏览型号IS43DR81280-25DBLI的Datasheet PDF文件第3页浏览型号IS43DR81280-25DBLI的Datasheet PDF文件第4页浏览型号IS43DR81280-25DBLI的Datasheet PDF文件第5页浏览型号IS43DR81280-25DBLI的Datasheet PDF文件第6页浏览型号IS43DR81280-25DBLI的Datasheet PDF文件第7页 
IS43/46DR81280, IS43/46DR16640  
PRELIMINARY INFORMATION  
MARCH 2010  
1Gb (x8, x16) DDR2 SDRAM  
FEATURES  
•
•
•
•
•
Clock frequency up to 533MHz  
8 internal banks for concurrent operation  
4‐bit prefetch architecture  
Programmable CAS Latency: 3, 4, 5, 6 and 7  
Programmable Additive Latency: 0, 1, 2, 3, 4, 5  
and 6  
•
•
•
Bidirectional differential Data Strobe (Single‐  
ended data‐strobe is an optional feature)  
On‐Chip DLL aligns DQ and DQs transitions with  
CK transitions  
DQS# can be disabled for single‐ended data  
strobe  
•
•
•
•
•
•
•
Read Data Strobe supported (x8 only)  
Differential clock inputs CK and CK#  
VDD and VDDQ = 1.8V ± 0.1V  
PASR (Partial Array Self Refresh)  
SSTL_18 interface  
tRAS lockout supported  
Operating temperature:  
Commercial (TA = 0°C to +70°C ; TC = 0°C to 85°C)  
Industrial (TA = ‐40°C to +85°C; TC = ‐40°C to 95°C)  
Automotive, A1 (TA = ‐40°C to +85°C; TC = ‐40°C to  
95°C)  
•
•
Write Latency = Read Latency‐1  
Programmable Burst Sequence: Sequential or  
Interleave  
Programmable Burst Length: 4 and 8  
Automatic and Controlled Precharge Command  
Power Down Mode  
•
•
•
•
•
•
•
•
Auto Refresh and Self Refresh  
Refresh Interval: 7.8 μs (8192 cycles/64 ms)  
OCD (Off‐Chip Driver Impedance Adjustment)  
ODT (On‐Die Termination)  
Weak Strength Data‐Output Driver Option  
OPTIONS  
ADDRESS TABLE  
Parameter  
128Mx8  
A0‐A13  
A0‐A9  
BA0‐BA2  
A10  
64Mx16  
A0‐A12  
A0‐A9  
BA0‐BA2  
A10  
• Configuration:  
Row Addressing  
Column Addressing  
Bank Addressing  
Precharge Addressing  
−
−
128Mx8 (16M x 8 x 8 banks)  
64Mx16 (8M x 16 x 8 banks)  
• Package:  
−
−
60‐ball FBGA for x8  
84‐ball FBGA for x16  
Clock Cycle Timing  
‐37C  
‐3D  
‐25E  
‐25D  
‐19F  
Units  
Speed Grade  
CL‐tRCD‐tRP  
tCK (CL=3)  
DDR2‐533C  
DDR2‐667D  
DDR2‐800E  
DDR2‐800D  
DDR2‐1066F  
4‐4‐4  
5
5‐5‐5  
5
6‐6‐6  
5
5‐5‐5  
5
7‐7‐7  
5
tCK  
ns  
tCK (CL=4)  
3.75  
3.75  
3.75  
3.75  
3.75  
ns  
tCK (CL=5)  
3.75  
3.75  
3.75  
266  
3
3
3
2.5  
2.5  
2.5  
400  
3
ns  
ns  
tCK (CL=6)  
2.5  
2.5  
400  
2.5  
tCK (CL=7)  
3
1.875  
533  
ns  
Frequency (max)  
333  
MHz  
Note: The ‐37C device specification is shown for reference only.  
Copyright © 2010 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without  
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the  
latest version of this device specification before relying on any published information and before placing orders for products.  
Integrated Silicon Solution, Inc. – www.issi.com –  
1
Rev. 00A, 3/17/2010  
1234567...28

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与IS43DR81280-25DBLI相关器件

型号 品牌 获取价格 描述 数据表
IS43DR81280A ISSI

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 		1Gb (x8, x16) DDR2 SDRAM
IS43DR81280A-25DBLI ISSI

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 		DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60, 8 X 13.65 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD F
IS43DR81280A-25DBLI-TR ISSI

获取价格

 		DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60, 8 X 13.65 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD F
IS43DR81280A-25EBL-TR ISSI

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 		DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60, 8 X 13.65 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD F
IS43DR81280A-3DBLI-TR ISSI

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 		DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA60, 8 X 13.65 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD
IS43DR81280A-3DBL-TR ISSI

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 		DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA60, 8 X 13.65 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD
IS43DR81280B ISSI

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 		1Gb (x8, x16) DDR2 SDRAM
IS43DR81280B-25DBL ISSI

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 		DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60, 8 X 10.50 MM, 1.20 MM HEIGHT, LEAD FREE, TWBGA-60
IS43DR81280B-25DBLI ISSI

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 		IC DRAM 1G PARALLEL 60TWBGA
IS43DR81280B-25DBLI-TR ISSI

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 		DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60,

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