Datasheet > IS43DR16640B-25EBL-TR

IS43DR16640B-25EBL-TR

更新时间： 2024-11-24 22:59:27

品牌	Logo	应用领域
美国芯成 - ISSI		动态存储器
页数	文件大小	规格书
29页	1060K
描述
IC DRAM 1G PARALLEL 84TWBGA

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IS43/46DR81280B(L), IS43/46DR16640B(L)

MARCH 2015

1Gb (x8, x16) DDR2 SDRAM

FEATURES



Clock frequency up to 400MHz

8 internal banks for concurrent operation

4-bit prefetch architecture

Programmable CAS Latency: 3, 4, 5, 6 and 7

Programmable Additive Latency: 0, 1, 2, 3, 4, 5

and 6



SSTL_18 interface

tRAS lockout supported

Operating temperature:

Commercial (T_A= 0°C to 70°C ; T_C= 0°C to 85°C)

Industrial (T_A= -40°C to 85°C; T_C= -40°C to 95°C)

Automotive, A1 (T_A= -40°C to 85°C; T_C= -40°C to 95°C)

Automotive, A2 (T_A= -40°C to 105°C; T_C= -40°C to

105°C)



Write Latency = Read Latency-1

Programmable Burst Sequence: Sequential or

Interleave

OPTIONS

 Configuration:



Programmable Burst Length: 4 and 8

Automatic and Controlled Precharge Command

Power Down Mode

Auto Refresh and Self Refresh

Refresh Interval: 7.8 s (8192 cycles/64 ms)

ODT (On-Die Termination)

Weak Strength Data-Output Driver Option

Bidirectional differential Data Strobe (Single-

ended data-strobe is an optional feature)

On-Chip DLL aligns DQ and DQs transitions with

CK transitions



128Mx8 (16M x 8 x 8 banks)

64Mx16 (8M x 16 x 8 banks)

 Package:



60-ball TW-BGA for x8

84-ball TW-BGA for x16

 Self-Refresh:



Standard

Low Power (L)



ADDRESS TABLE

Parameter

Row Addressing

Column Addressing

Bank Addressing

Precharge Addressing

DQS# can be disabled for single-ended data

strobe

128Mx8

A0-A13

A0-A9

BA0-BA2

A10

64Mx16

A0-A12

A0-A9

BA0-BA2

A10



Read Data Strobe supported (x8 only)

Differential clock inputs CK and CK#

VDD and VDDQ = 1.8V ± 0.1V

PASR (Partial Array Self Refresh)

Clock Cycle Timing

-3D

-25E

-25D

Units

Speed Grade

CL-tRCD-tRP

tCK (CL=3)

DDR2-667D

DDR2-800E

DDR2-800D

5-5-5

6-6-6

5-5-5

tCK

tCK (CL=4)

tCK (CL=5)

tCK (CL=6)

tCK (CL=7)

3.75

333

3.75

2.5

400

3.75

2.5

400

Frequency (max)

MHz

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can

reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such

applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Rev. G

3/25/2015

12 3 4 5 6 7...29

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与IS43DR16640B-25EBL-TR相关器件

型号	品牌	获取价格	描述	数据表
IS43DR16640B-3DBI	ISSI	获取价格	IC DRAM 1G PARALLEL 84TWBGA
IS43DR16640B-3DBI-TR	ISSI	获取价格	IC DRAM 1G PARALLEL 84TWBGA
IS43DR16640B-3DBL	ISSI	获取价格	DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD
IS43DR16640B-3DBLI	ISSI	获取价格	IC DRAM 1G PARALLEL 84TWBGA
IS43DR16640B-3DBLI-TR	ISSI	获取价格	IC DRAM 1G PARALLEL 84TWBGA
IS43DR16640C	ISSI	获取价格	Differential data strobe
IS43DR16640C-25DBLI	ISSI	获取价格	DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84, TWBGA-84
IS43DR16640C-3DBL	ISSI	获取价格	DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, TWBGA-84
IS43DR16640C-3DBLI	ISSI	获取价格	DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, TWBGA-84
IS43DR32800A	ISSI	获取价格	256Mb DDR2 DRAM

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