Datasheet > IRHNJ6S7230SCS

IRHNJ6S7230SCS

更新时间： 2023-12-06 20:12:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	426K
描述
Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, QIRL

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRHNJ6S7230SCS 数据手册

IRHNJ6S7230

Pre-Irradiation

Radiation Characteristics

IR HiRel radiation hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance

program at IR Hirel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose

(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using

the same drive circuitry and test conditions in order to provide a direct comparison.

Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation 

Up to 300 kRads (Si)¹

Parameter

Units

Test Conditions

Min.

200

2.0

Max.

–––

4.0

BV_DSS

V_GS(th)

I_GSS

Drain-to-Source Breakdown Voltage

Gate Threshold Voltage

V_GS= 0V, I_D= 1.0mA

V_DS= V_GS, I_D= 1.0mA

V_GS= 20V

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

–––

100

-100

µA

I_GSS

V_GS= -20V

I_DSS

V_DS= 160V, V_GS= 0V

Static Drain-to-Source 

On-State Resistance (TO-3)

R_DS(on)

–––

0.134

V_GS= 12V, I_D= 10A 



Static Drain-to-Source 

On-State Resistance (SMD-2)

R_DS(on)

V_SD

–––

0.13

1.2

V_GS= 12V, I_D= 10A 

V_GS= 0V, I_D= 16A 



Diode Forward Voltage 

1. Part numbers IRHNJ6S7230 and IRHNJ6S3230

IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects

(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Typical Single Event Effect Safe Operating Area

VDS (V)

LET

Energy

(MeV)

Range

(µm)

(MeV/(mg/cm²))

@ VGS = 0V @ VGS = -5V @ VGS = -10V @ VGS = -15V

49.2 ± 5%

58.4 ± 5%

719 ± 5%

876 ± 5%

64.2 ± 5%

200

180

200

180

200

180

200

–––

69.7 ± 7.5%

250

200

150

100

LET = 49.2 ± 5%

LET = 58.4 ± 5%

-5

-10

Bias VGS (V)

-15

Fig a. Typical Single Event Effect, Safe Operating Area

For Footnotes, refer to the page 2.

2017-04-27

1 234 5 6 7...9

下载PDF

与IRHNJ6S7230SCS相关器件

型号	品牌	描述	获取价格	数据表
IRHNJ6S7234	INFINEON	Rad hard, 250V, 12.4A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 kr	获取价格
IRHNJ6S7234SCS	INFINEON	Rad hard, 250V, 12.4A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 kr	获取价格
IRHNJ7130	INFINEON	100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY	获取价格
IRHNJ7130B	INFINEON	Power Field-Effect Transistor,	获取价格
IRHNJ7130PBF	INFINEON	Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Me	获取价格
IRHNJ7130SCS	INFINEON	Rad hard, 100V, 9.1A, single, N-channel MOSFET, R4 in a SMD-0.5 package - SMD-0.5, 100 kra	获取价格