Datasheet > IRHNJ57Z30B

IRHNJ57Z30B

更新时间： 2023-12-06 20:12:21

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	738K
描述
Rad hard, 30V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, COTS, Lead Attached and Formed

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IRHNJ57Z30B 数据手册

IRHNJ57Z30 (JANSR2N7479U3)

Radiation Hardened Power MOSFET Surface Mount (SMD-0.5)

Test Circuits (Pre-irradiation)

Figure 13 Gate Charge Test Circuit

Figure 14 Gate Charge Waveform

Figure 15 Unclamped Inductive Test Circuit

Figure 16 Unclamped Inductive Waveform

Figure 17 Switching Time Test Circuit

Figure 18 Switching Time Waveforms

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型号	品牌	描述	获取价格	数据表
IRHNJ57Z30PBF	INFINEON	Power Field-Effect Transistor, 22A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Meta	获取价格
IRHNJ57Z30SCSPBF	INFINEON	Power Field-Effect Transistor, 22A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Meta	获取价格
IRHNJ58034	INFINEON	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)	获取价格
IRHNJ58034PBF	INFINEON	Power Field-Effect Transistor, 22A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta	获取价格
IRHNJ58130	INFINEON	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)	获取价格
IRHNJ58230	INFINEON	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)	获取价格