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IRHNJ57Z30B PDF预览

IRHNJ57Z30B

更新时间: 2023-12-06 20:12:21
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
13页 738K
描述
Rad hard, 30V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, COTS, Lead Attached and Formed

IRHNJ57Z30B 数据手册

 浏览型号IRHNJ57Z30B的Datasheet PDF文件第4页浏览型号IRHNJ57Z30B的Datasheet PDF文件第5页浏览型号IRHNJ57Z30B的Datasheet PDF文件第6页浏览型号IRHNJ57Z30B的Datasheet PDF文件第8页浏览型号IRHNJ57Z30B的Datasheet PDF文件第9页浏览型号IRHNJ57Z30B的Datasheet PDF文件第10页 
IRHNJ57Z30 (JANSR2N7479U3)  
Radiation Hardened Power MOSFET Surface Mount (SMD-0.5)  
Electrical Characteristics Curves (Pre-irradiation)  
3
Electrical Characteristics Curves (Pre-irradiation)  
Figure 2  
Typical Output Characteristics  
Figure 3  
Typical Output Characteristics  
Figure 4  
Typical Transfer Characteristics  
Figure 5  
Normalized On-Resistance Vs.  
Temperature  
7 of 13  
2023-06-15  

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