Datasheet > 晶体管 > IGBT> IRGVH50FUPBF

IRGVH50FUPBF

更新时间： 2024-11-06 13:08:51

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管栅
页数	文件大小	规格书
8页	536K
描述
Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-258AA

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IRGVH50FUPBF 数据手册

PD -90928A

IRGVH50F

Fast Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

Features

• Electrically Isolated and Hermetically Sealed

• Simple Drive Requirements

• Latch-proof

V_CES= 1200V

• Fast Speed operation 3 kHz - 8 kHz

• High operating frequency

V_{CE(on) max}= 2.9V

• Switching-loss rating includes all "tail" losses

@V_GE= 15V, I_C= 25A

n-channel

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have

higher usable current densities than comparable bipolar transistors, while at the

sametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.

They provide substantial benefits to a host of high-voltage, high-current

applications.

The performance of various IGBTs varies greatly with frequency. Note that IR now

provides the designer with a speed benchmark (f_Ic/2, or the "half-current frequency "),

as well as an indication of the current handling capability of the device.

TO-258AA

Absolute Maximum Ratings

Parameter

Max.

1200

Units

V_CES

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current ➀

Clamped Inductive Load Current ➁

Gate-to-Emitter Voltage

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

180

I_LM

V_GE

P_D@ T_C= 25°C

Maximum Power Dissipation

200

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

Storage Temperature Range

Lead Temperature

Weight

-55 to + 150

T_STG

°C

300 (0.063in./1.6mm from case for 10s)

10.5 (typical)

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

thJC

thCS

thJA

Junction-to-Case

Case-to-Sink

Junction-to-Ambient

—

0.21

—

0.625

—

°C/W

For footnotes refer to the last page

www.irf.com

02/20/02

12 3 4 5 6 7 8

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