IRGBC20MD2-S

更新时间： 2024-11-04 22:32:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体二极管晶体管电动机控制双极性晶体管栅超快软恢复二极管快速软恢复二极管
页数	文件大小	规格书
8页	384K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=8.0A)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRGBC20MD2-S 数据手册

Previous Datasheet

Index

Next Data Sheet

PD - 9.1141

IRGBC20MD2-S

INSULATED GATE BIPOLAR TRANSISTOR

WITH ULTRAFAST SOFT RECOVERY DIODE

Short Circuit Rated

Fast CoPack IGBT

Features

• Short circuit rated -10µs @125°C, V _GE= 15V

• Switching-loss rating includes all "tail" losses

• HEXFRED^TMsoft ultrafast diodes

• Optimized for medium operating frequency ( 1 to

10kHz) See Fig. 1 for Current vs. Frequency curve

V_CES= 600V

_CE(sat)≤ 2.5V

@V_GE= 15V, I_C= 8.0A

n-channel

Description

Co-packaged IGBTs are a natural extension of International Rectifier's well

known IGBT line. They provide the convenience of an IGBT and an ultrafast

recovery diode in one package, resulting in substantial benefits to a host of

high-voltage, high-current, applications.

These new short circuit rated devices are especially suited for motor control

and other applications requiring short circuit withstand capability.

SMD-220

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

600

I_C@ T_C= 25°C

I_C@ T_C= 100°C

8.0

I_CM

I_LM

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Short Circuit Withstand Time

Gate-to-Emitter Voltage

I_F@ T_C= 100°C

7.0

I_FM

t_sc

± 20

µs

V_GE

P_D@ T_C= 25°C

Maximum Power Dissipation

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw.

°C

300 (0.063 in. (1.6mm) from case)

10 lbf•in (1.1 N•m)

Thermal Resistance

Parameter

Junction-to-Case - IGBT

Min.

Typ.

—

Max.

Units

R_θJC

R_θJA

—

2.1

3.5

—

Junction-to-Case - Diode

Junction-to-Ambient, (PCB Mount)**

Junction-to-Ambient, typical socket mount

Weight

—

°C/W

—

2 (0.07)

g (oz)

** When mounted on 1" square PCB (FR-4 or G-10 Material)

For recommended footprint and soldering techniques refer to application note #AN-994.

Revision 2

C-365

To Order

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRGBC20MD2-S相关器件

型号	品牌	获取价格	描述	数据表
IRGBC20MD2-STRL	INFINEON	获取价格	暂无描述
IRGBC20MD2-STRLPBF	INFINEON	获取价格	暂无描述
IRGBC20MD2-STRR	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN
IRGBC20MD2-STRRPBF	INFINEON	获取价格	暂无描述
IRGBC20M-S	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=8.0A)
IRGBC20M-STRL	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN
IRGBC20M-STRLPBF	INFINEON	获取价格	暂无描述
IRGBC20M-STRR	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN
IRGBC20M-STRRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN
IRGBC20S	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=10A)

与IRGBC20MD2-S相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

14
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

10
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

36
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

IRGBC20MD2-S

IRGBC20MD2-S 数据手册

与IRGBC20MD2-S相关器件

与IRGBC20MD2-S相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRGBC20MD2-S

IRGBC20MD2-S 数据手册

与IRGBC20MD2-S相关器件

与IRGBC20MD2-S相关文章

您还可以找

您在本页遇到什么问题？