IRGBC30K-STRL

更新时间： 2024-01-03 19:37:43

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管栅
页数	文件大小	规格书
6页	218K
描述
暂无描述

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRGBC30K-STRL 数据手册

Previous Datasheet

Index

Next Data Sheet

PD - 9.689A

IRGBC30F

INSULATED GATE BIPOLAR TRANSISTOR

Fast Speed IGBT

Features

• Switching-loss rating includes all "tail" losses

• Optimized for medium operating frequency ( 1 to

10kHz) See Fig. 1 for Current vs. Frequency curve

V_CES= 600V

_CE(sat)≤ 2.1V

@V_GE= 15V, I_C= 17A

n-channel

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have

higher usable current densities than comparable bipolar transistors, while at

the same time having simpler gate-drive requirements of the familiar power

MOSFET. They provide substantial benefits to a host of high-voltage, high-

current applications.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

600

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

120

I_LM

Clamped Inductive Load Current

Gate-to-Emitter Voltage

120

V_GE

±20

E_ARV

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

P_D@ T_C= 25°C

100

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting torque, 6-32 or M3 screw.

°C

300 (0.063 in. (1.6mm) from case)

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Min.

—

Typ.

—

Max.

1.2

—

Units

°C/W

R_θJC

R_θCS

R_θJA

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount

Weight

—

0.50

—

2.0 (0.07)

—

g (oz)

C-57

To Order

12 3 4 5 6

下载PDF

与IRGBC30K-STRL相关器件

型号	品牌	描述	获取价格	数据表
IRGBC30K-STRLPBF	INFINEON	Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN	获取价格
IRGBC30K-STRRPBF	INFINEON	Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN	获取价格
IRGBC30M	INFINEON	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=16A)	获取价格
IRGBC30MD2	INFINEON	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=16A	获取价格
IRGBC30MD2-S	INFINEON	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V,	获取价格
IRGBC30MD2-STRL	INFINEON	Insulated Gate Bipolar Transistor, 26A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN	获取价格