Datasheet > IRFP240

IRFP240

更新时间： 2024-11-28 22:51:39

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
7页	60K
描述
20A, 200V, 0.180 Ohm, N-Channel Power MOSFET

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IRFP240 数据手册

IRFP240

Data Sheet

July 1999

File Number 2087.4

20A, 200V, 0.180 Ohm, N-Channel Power

MOSFET

Features

• 20A, 200V

This N-Channel enhancement mode silicon gate power ﬁeld

effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a speciﬁed level of

energy in the breakdown avalanche mode of operation. All of

these power MOSFETs are designed for applications such

as switching regulators, switching convertors, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

• r

= 0.180Ω

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Formerly developmental type TA17422.

Ordering Information

Symbol

PART NUMBER

PACKAGE

BRAND

IRFP240

TO-247

NOTE: When ordering, include the entire part number.

Packaging

JEDEC STYLE TO-247

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

4-317

12 3 4 5 6 7

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