IRFP048RPBF

更新时间： 2024-11-24 04:23:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	2313K
描述
HEXFET Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFP048RPBF 数据手册

PD-95502

IRFP048RPbF

Lead-Free

Absolute Maximum Ratings

Parameter

Max.

70*

Units

I_D@ T_C= 25°C Continuous Drain Current, V_GS@ 10V

I_D@ T_C= 100°C Continuous Drain Current, V_GS@ 10V

I_DM

290

190

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

Linear Derating Factor

1.3

±20

200

W/°C

V_GS

E_AS

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

dv/dt

T_J

4.5

V/ns

-55 to + 175

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

300 (1.6mm from case )

10lb in (1.1N m)

Thermal Resistance

Symbol

Parameter

Min.

Typ.

–––

Max.

Units

R_θ

Junction-to-Case

–––

0.80

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.24

°C/W

www.irf.com

07/06/04

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRFP048RPBF相关器件

型号	品牌	获取价格	描述	数据表
IRFP054	INFINEON	获取价格	Power MOSFET(Vdss=60V, Rds(on)=0.014ohm, Id=70*A)
IRFP054	VISHAY	获取价格	Power MOSFET
IRFP054_11	VISHAY	获取价格	Power MOSFET
IRFP054N	INFINEON	获取价格	Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=8
IRFP054N-201PBF	INFINEON	获取价格	Power Field-Effect Transistor, 81A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Met
IRFP054N-202	INFINEON	获取价格	Power Field-Effect Transistor, 81A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Met
IRFP054N-202PBF	INFINEON	获取价格	Power Field-Effect Transistor, 81A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Met
IRFP054N-203PBF	INFINEON	获取价格	Power Field-Effect Transistor, 81A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Met
IRFP054N-204PBF	INFINEON	获取价格	Power Field-Effect Transistor, 81A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Met
IRFP054N-205	INFINEON	获取价格	Power Field-Effect Transistor, 81A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Met