IRFP054N

更新时间： 2024-02-03 14:20:20

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	111K
描述
Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=81A)

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中文翻译

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数据手册
替代型号

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IRFP054N 数据手册

PD - 9.1382A

IRFP054N

HEXFET^®Power MOSFET

l Advanced Process Technology

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

V_DSS= 55V

R_DS(on)= 0.012Ω

I_D= 81A

l Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

knownfor, providesthedesignerwithanextremelyefficient

and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial

applications where higher power levels preclude the use of

TO-220 devices. The TO-247 is similar but superior to the

earlier TO-218 package because of its isolated mounting

hole.

TO-247AC

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current ꢀ

290

P_D@T_C= 25°C

Power Dissipation

170

W/°C

Linear Derating Factor

1.1

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

360

Single Pulse Avalanche Energyꢀ

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ꢀ

Operating Junction and

5.0

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

Units

R_θJC

R_θCS

R_θJA

0.90

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.24

–––

°C/W

8/25/97

12 3 4 5 6 7 8

中文翻译

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IRFP054N 替代型号

型号	品牌	替代类型	描述	数据表
IRFP054NPBF	INFINEON	类似代替	HEXFET Power MOSFET
HUF75345G3	FAIRCHILD	功能相似	75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs
HUF75344G3	FAIRCHILD	功能相似	75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs

与IRFP054N相关器件

型号	品牌	获取价格	描述	数据表
IRFP054N-201PBF	INFINEON	获取价格	Power Field-Effect Transistor, 81A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Met
IRFP054N-202	INFINEON	获取价格	Power Field-Effect Transistor, 81A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Met
IRFP054N-202PBF	INFINEON	获取价格	Power Field-Effect Transistor, 81A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Met
IRFP054N-203PBF	INFINEON	获取价格	Power Field-Effect Transistor, 81A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Met
IRFP054N-204PBF	INFINEON	获取价格	Power Field-Effect Transistor, 81A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Met
IRFP054N-205	INFINEON	获取价格	Power Field-Effect Transistor, 81A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Met
IRFP054N-205PBF	INFINEON	获取价格	Power Field-Effect Transistor, 81A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Met
IRFP054N-206	INFINEON	获取价格	Power Field-Effect Transistor, 81A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Met
IRFP054N-207	INFINEON	获取价格	Power Field-Effect Transistor, 81A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Met
IRFP054N-207PBF	INFINEON	获取价格	Power Field-Effect Transistor, 81A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Met

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