Datasheet > IRFI520GPBF

IRFI520GPBF

更新时间： 2024-10-29 05:39:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	1628K
描述
Power MOSFET

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中文翻译

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IRFI520GPBF 数据手册

IRFI520G, SiHFI520G

Vishay Siliconix

Power MOSFET

FEATURES

• Isolated Package

• High Voltage Isolation = 2.5 kV_RMS(t = 60 s;

f = 60 Hz)

PRODUCT SUMMARY

V_DS(V)

100

Available

R_DS(on)(Ω)

V_GS= 10 V

0.27

RoHS*

Q_g(Max.) (nC)

4.4

• Sink to Lead Creepage Distance = 4.8 mm

• 175 °C Operating Temperature

• Dynamic dV/dt Rating

COMPLIANT

_gs(nC)

_gd(nC)

7.7

• Low Thermal Resistance

• Lead (Pb)-free Available

Configuration

Single

TO-220 FULLPAK

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional

insulating hardware in commercial-industrial applications.

The moulding compound used provides a high isolation

capability and a low thermal resistance between the tab and

external heatsink. This isolation is equivalent to using a 100

micron mica barrier with standard TO-220 product. The

FULLPAK is mounted to a heatsink using a single clip or by

a single screw fixing.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220 FULLPAK

IRFI520GPbF

SiHFI520G-E3

IRFI520G

Lead (Pb)-free

SnPb

SiHFI520G

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

100

V_GS

_C= 25 °C

7.2

Continuous Drain Current

_GSat 10 V

I_D

T_C=100°C

5.1

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.24

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

7.2

E_AR

3.7

Maximum Power Dissipation

Peak Diode Recovery dV/dt^c

T_C= 25 °C

P_D

5.5

dV/dt

T_J, T_stg

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 175

300^d

°C

for 10 s

lbf · in

N · m

Mounting Torque

6-32 or M3 screw

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, starting T_J= 25 °C, L = 1.0 mH, R_G= 25 Ω, I_AS= 7.2 A (see fig. 12).

c. I_SD≤ 9.2 A, dI/dt ≤ 110 A/µs, V_DD≤ V_DS, T_J≤ 175 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91143

S-Pending-Rev. A, 13-Jun-08

www.vishay.com

WORK-IN-PROGRESS

12 3 4 5 6 7 8

中文翻译

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与IRFI520GPBF相关器件

型号	品牌	获取价格	描述	数据表
IRFI520N	INFINEON	获取价格	Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=7.6A)
IRFI520N-002	INFINEON	获取价格	Power Field-Effect Transistor, 7.2A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Met
IRFI520N-003PBF	INFINEON	获取价格	7.2A, 100V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
IRFI520N-004	INFINEON	获取价格	Power Field-Effect Transistor, 7.2A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Met
IRFI520N-005	INFINEON	获取价格	Power Field-Effect Transistor, 7.2A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Met
IRFI520N-005PBF	INFINEON	获取价格	暂无描述
IRFI520N-006	INFINEON	获取价格	Power Field-Effect Transistor, 7.2A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Met
IRFI520N-006PBF	INFINEON	获取价格	7.2A, 100V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
IRFI520N-009	INFINEON	获取价格	Power Field-Effect Transistor, 7.2A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Met
IRFI520N-009PBF	INFINEON	获取价格	Power Field-Effect Transistor, 7.2A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Met

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