Datasheet > IRFI5210

IRFI5210

更新时间： 2024-10-28 22:24:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	152K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册

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IRFI5210 数据手册

PD - 9.1404A

IRFI5210

PRELIMINARY

HEXFET^®Power MOSFET

l Advanced Process Technology

l Isolated Package

l High Voltage Isolation = 2.5KVRMS ꢀ

l Sink to Lead Creepage Dist. = 4.8mm

l P-Channel

V_DSS= -100V

R_DS(on)= 0.06Ω

l Fully Avalanche Rated

I_D= -23A

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

knownfor, providesthedesignerwithanextremelyefficient

and reliable device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional

insulating hardware in commercial-industrial applications.

The moulding compound used provides a high isolation

capability and a low thermal resistance between the tab

and external heatsink. This isolation is equivalent to using

a 100 micron mica barrier with standard TO-220 product.

The Fullpak is mounted to a heatsink using a single clip or

by a single screw fixing.

TO-220 FULLPAK

Absolute Maximum Ratings

Parameter

Max.

-23

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

-16

-140

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.42

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

Single Pulse Avalanche Energy

Avalanche Current

690

-21

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

6.3

V/ns

-5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Junction-to-Ambient

Typ.

–––

Max.

2.4

Units

R_θJC

R_θJA

°C/W

–––

3/16/98

12 3 4 5 6 7 8

中文翻译

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与IRFI5210相关器件

型号	品牌	获取价格	描述	数据表
IRFI530	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 9.7A I(D) \| TO-220AB
IRFI530-001	INFINEON	获取价格	Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Me
IRFI530-001PBF	INFINEON	获取价格	Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Me
IRFI530-002PBF	INFINEON	获取价格	Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Me
IRFI530-003PBF	INFINEON	获取价格	9.7A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET
IRFI530-004	INFINEON	获取价格	Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Me
IRFI530-004PBF	INFINEON	获取价格	Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Me
IRFI530-005PBF	INFINEON	获取价格	Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Me
IRFI530-006	INFINEON	获取价格	Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Me
IRFI530-006PBF	INFINEON	获取价格	Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Me

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