5秒后页面跳转
| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| IRFI530G-002PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Me |
|
| IRFI530G-003 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Me |
|
| IRFI530G-003PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Me |
|
| IRFI530G-004PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Me |
|
| IRFI530G-005 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Me |
|
| IRFI530G-005PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Me |
|
| IRFI530G-006 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Me |
|
| IRFI530G-006PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Me |
|
| IRFI530G-009PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Me |
|
| IRFI530G-010PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Me |
|
三星深化印度制造布局，供应链本地化进程加速
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
意法半导体发布第四代SiC技术，助力电动汽车电驱
工作时间：9:00-21:00
CEO邮箱：ceo@jiepei.com
投诉邮箱：tousu@jiepei.com
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
