型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFI530G-030 | INFINEON |
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Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Me | |
IRFI530G-030PBF | INFINEON |
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Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Me | |
IRFI530G-031 | INFINEON |
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Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Me | |
IRFI530G-031PBF | INFINEON |
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Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Me | |
IRFI530GPBF | VISHAY |
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Power MOSFET | |
IRFI530N | INFINEON |
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HEXFET?? Power MOSFET | |
IRFI530N-002 | INFINEON |
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Power Field-Effect Transistor, 11A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Met | |
IRFI530N-003 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 11A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Met | |
IRFI530N-004 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 11A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Met | |
IRFI530N-005 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 11A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Met |