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IRFI530GPBF

更新时间： 2024-10-29 12:08:39
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 937K
描述
Power MOSFET

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IRFI530GPBF 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：TO-220AB
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：6 weeks
风险等级：5.27雪崩能效等级（Eas）：100 mJ
外壳连接：ISOLATED配置：SINGLE
最小漏源击穿电压：100 V最大漏极电流 (Abs) (ID)：9.7 A
最大漏极电流 (ID)：9.7 A最大漏源导通电阻：0.16 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：42 W
最大脉冲漏极电流 (IDM)：39 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子面层：Matte Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON

IRFI530GPBF 数据手册

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IRFI530G, SiHFI530G  
Vishay Siliconix  
Power MOSFET  
FEATURES  
PRODUCT SUMMARY  
VDS (V)  
• Isolated Package  
100  
Available  
• High Voltage Isolation = 2.5 kVRMS (t = 60 s;  
f = 60 Hz)  
RDS(on) (Ω)  
VGS = 10 V  
0.16  
RoHS*  
COMPLIANT  
• Sink to Lead Creepage Distance = 4.8 mm  
• 175 °C Operating Temperature  
• Dynamic dV/dt Rating  
Qg (Max.) (nC)  
33  
5.4  
Q
Q
gs (nC)  
gd (nC)  
15  
• Low Thermal Resistance  
Configuration  
Single  
• Lead (Pb)-free Available  
D
DESCRIPTION  
TO-220 FULLPAK  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
G
The TO-220 FULLPAK eliminates the need for additional  
insulating hardware in commercial-industrial applications.  
The molding compound used provides a high isolation  
capability and a low thermal resistance between the tab and  
external heatsink. This isolation is equivalent to using a 100  
micron mica barrier with standard TO-220 product. The  
FULLPAK is mounted to a heatsink using a single clip or by  
a single screw fixing.  
S
N-Channel MOSFET  
S
D
G
ORDERING INFORMATION  
Package  
TO-220 FULLPAK  
IRFI530GPbF  
SiHFI530G-E3  
IRFI530G  
Lead (Pb)-free  
SnPb  
SiHFI530G  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
100  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
20  
TC = 25 °C  
TC =100°C  
9.7  
Continuous Drain Current  
V
GS at 10 V  
ID  
6.9  
A
Pulsed Drain Currenta  
IDM  
39  
Linear Derating Factor  
0.28  
100  
W/°C  
mJ  
A
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
EAS  
IAR  
9.7  
EAR  
4.2  
mJ  
W
Maximum Power Dissipation  
T
C = 25 °C  
PD  
42  
Peak Diode Recovery dV/dtc  
dV/dt  
TJ, Tstg  
5.5  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
- 55 to + 175  
300d  
10  
°C  
for 10 s  
6-32 or M3 screw  
lbf · in  
N · m  
Mounting Torque  
1.1  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 25 V, starting TJ = 25 °C, L = 1.6 mH, RG = 25 Ω, IAS = 9.7 A (see fig. 12).  
c. ISD ≤ 9.7 A, dI/dt ≤ 140 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.  
d. 1.6 mm from case.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 90180  
S-82995-Rev. A, 12-Jan-09  
www.vishay.com  
1
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