Datasheet > IRFI3710

IRFI3710

更新时间： 2024-10-27 22:24:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	154K
描述
HEXFET Power MOSFET

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中文翻译

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IRFI3710 数据手册

PD - 9.1387B

IRFI3710

PRELIMINARY

HEXFET^®Power MOSFET

l Advanced Process Technology

l Isolated Package

l High Voltage Isolation = 2.5KVRMS ꢀ

l Sink to Lead Creepage Dist. = 4.8mm

l Fully Avalanche Rated

V_DSS= 100V

_DS(on)= 0.025Ω

Description

I_D= 32A

FifthGenerationHEXFETsfromInternationalRectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional

insulating hardware in commercial-industrial

applications. The moulding compound used provides

a high isolation capability and a low thermal resistance

between the tab and external heatsink. This isolation

is equivalent to using a 100 micron mica barrier with

standard TO-220 product. The Fullpak is mounted to

a heatsink using a single clip or by a single screw

fixing.

TO-220 FULLPAK

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

180

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.42

± 20

530

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

6.3

V/ns

5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Junction-to-Ambient

Typ.

–––

Max.

2.4

Units

R_θJC

R_θJA

°C/W

–––

3/16/98

12 3 4 5 6 7 8

中文翻译

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与IRFI3710相关器件

型号	品牌	获取价格	描述	数据表
IRFI3710-002	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me
IRFI3710-002PBF	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me
IRFI3710-003	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me
IRFI3710-004PBF	INFINEON	获取价格	28A, 100V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
IRFI3710-005	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me
IRFI3710-005PBF	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me
IRFI3710-006	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me
IRFI3710-009	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me
IRFI3710-009PBF	INFINEON	获取价格	28A, 100V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
IRFI3710-011	INFINEON	获取价格	Power Field-Effect Transistor, 28A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me

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