是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.57 |
外壳连接: | ISOLATED | 配置: | SINGLE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 22 A |
最大漏源导通电阻: | 0.036 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) - with Nickel (Ni) barrier |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFI1310N-006 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Me | |
IRFI1310N-009 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Me | |
IRFI1310N-009PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Me | |
IRFI1310N-010PBF | INFINEON |
获取价格 |
22A, 100V, 0.036ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | |
IRFI1310N-011 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Me | |
IRFI1310N-011PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Me | |
IRFI1310N-012 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Me | |
IRFI1310N-012PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Me | |
IRFI1310N-013 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Me | |
IRFI1310N-015 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Me |