生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.84 |
雪崩能效等级(Eas): | 63 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 5.6 A |
最大漏源导通电阻: | 0.4 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 20 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFI260 | INFINEON |
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TRANSISTOR N-CHANNEL(Vdss=200V, Rds(on)=0.060ohm, Id=45A*) | |
IRFI2807 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 40A I(D) | TO-220AB | |
IRFI3205 | INFINEON |
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Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=64A) | |
IRFI3205-002 | INFINEON |
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Power Field-Effect Transistor, 56A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Met | |
IRFI3205-003 | INFINEON |
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Power Field-Effect Transistor, 56A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Met | |
IRFI3205-003PBF | INFINEON |
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Power Field-Effect Transistor, 56A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Met | |
IRFI3205-004 | INFINEON |
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Power Field-Effect Transistor, 56A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Met | |
IRFI3205-004PBF | INFINEON |
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Power Field-Effect Transistor, 56A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Met | |
IRFI3205-005 | INFINEON |
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Power Field-Effect Transistor, 56A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Met | |
IRFI3205-006 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 56A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Met |