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IRFI1310N-019 PDF预览

IRFI1310N-019

更新时间: 2024-10-29 04:00:51
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
1页 34K
描述
Power Field-Effect Transistor, 22A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

IRFI1310N-019 数据手册

  

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IRFI1310N-019PBF INFINEON

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Power Field-Effect Transistor, 22A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Me
IRFI1310N-024PBF INFINEON

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22A, 100V, 0.036ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
IRFI1310N-029PBF INFINEON

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Power Field-Effect Transistor, 22A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Me
IRFI1310N-030PBF INFINEON

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Power Field-Effect Transistor, 22A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Me
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Power Field-Effect Transistor, 22A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Me
IRFI1310N-031PBF INFINEON

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22A, 100V, 0.036ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
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