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IRFI1310G-031 PDF预览

IRFI1310G-031

更新时间: 2024-10-29 05:14:15
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
1页 47K
描述
Power Field-Effect Transistor, 21A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

IRFI1310G-031 数据手册

  

与IRFI1310G-031相关器件

型号 品牌 获取价格 描述 数据表
IRFI1310N INFINEON

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Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=24A)
IRFI1310N-002 INFINEON

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Power Field-Effect Transistor, 22A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Me
IRFI1310N-002PBF INFINEON

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22A, 100V, 0.036ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
IRFI1310N-003 INFINEON

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Power Field-Effect Transistor, 22A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Me
IRFI1310N-003PBF INFINEON

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Power Field-Effect Transistor, 22A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Me
IRFI1310N-004PBF INFINEON

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Power Field-Effect Transistor, 22A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Me
IRFI1310N-005PBF INFINEON

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暂无描述
IRFI1310N-006 INFINEON

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Power Field-Effect Transistor, 22A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Me
IRFI1310N-009 INFINEON

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Power Field-Effect Transistor, 22A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Me
IRFI1310N-009PBF INFINEON

获取价格

Power Field-Effect Transistor, 22A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Me