是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.55 |
其他特性: | HIGH RELIABILITY | 雪崩能效等级(Eas): | 360 mJ |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 55 V | 最大漏极电流 (ID): | 49 A |
最大漏源导通电阻: | 0.012 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 290 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) - with Nickel (Ni) barrier |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFI1010N-110PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 49A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Met | |
IRFI1010N-112 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 49A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Met | |
IRFI1010N-112PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 49A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Met | |
IRFI1010NPBF | INFINEON |
获取价格 |
HEXFET㈢ Power MOSFET | |
IRFI1310G | INFINEON |
获取价格 |
Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=22A) | |
IRFI1310G-002 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 21A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Met | |
IRFI1310G-002PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 21A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Met | |
IRFI1310G-003 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 21A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Met | |
IRFI1310G-005PBF | INFINEON |
获取价格 |
21A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | |
IRFI1310G-006 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 21A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Met |