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IRFHS8342TRPBF PDF预览

IRFHS8342TRPBF

更新时间: 2024-01-28 16:35:00
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 263K
描述
HEXFET Power MOSFET

IRFHS8342TRPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:QFN
包装说明:SMALL OUTLINE, S-PDSO-N6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:7.38外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):8.5 A最大漏极电流 (ID):8.8 A
最大漏源导通电阻:0.016 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:S-PDSO-N6JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:SQUARE封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2.1 W最大脉冲漏极电流 (IDM):76 A
认证状态:Not Qualified子类别:FET General Purpose Powers
表面贴装:YES端子面层:MATTE TIN
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFHS8342TRPBF 数据手册

 浏览型号IRFHS8342TRPBF的Datasheet PDF文件第1页浏览型号IRFHS8342TRPBF的Datasheet PDF文件第3页浏览型号IRFHS8342TRPBF的Datasheet PDF文件第4页浏览型号IRFHS8342TRPBF的Datasheet PDF文件第5页浏览型号IRFHS8342TRPBF的Datasheet PDF文件第6页浏览型号IRFHS8342TRPBF的Datasheet PDF文件第7页 
IRFHS8342PbF  
Static @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
Conditions  
VGS = 0V, ID = 250μA  
––– mV/°C Reference to 25°C, ID = 1mA  
BVDSS  
Drain-to-Source Breakdown Voltage  
Breakdown Voltage Temp. Coefficient  
Static Drain-to-Source On-Resistance  
30  
–––  
–––  
–––  
1.35  
–––  
–––  
–––  
–––  
–––  
18  
–––  
–––  
V
ΔΒVDSS/ΔTJ  
RDS(on)  
22  
13  
16  
25  
V
GS = 10V, ID = 8.5A  
GS = 4.5V, ID = 6.8A  
mΩ  
20  
V
VGS(th)  
ΔVGS(th)  
IDSS  
Gate Threshold Voltage  
1.8  
-5.8  
–––  
–––  
–––  
–––  
–––  
4.2  
8.7  
1.5  
1.3  
1.9  
5.9  
15  
2.35  
V
VDS = VGS, ID = 25μA  
Gate Threshold Voltage Coefficient  
Drain-to-Source Leakage Current  
––– mV/°C  
1.0  
μA  
VDS = 24V, VGS = 0V  
150  
VDS = 24V, VGS = 0V, TJ = 125°C  
IGSS  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
Forward Transconductance  
Total Gate Charge  
100  
nA  
V
GS = 20V  
GS = -20V  
-100  
V
gfs  
Qg  
–––  
–––  
–––  
–––  
–––  
S
VDS = 10V, ID = 8.5A  
nC VGS = 4.5V, VDS = 15V, ID = 8.5A  
DS = 15V  
VGS = 10V  
D = 8.5A (See Fig. 6 & 16)  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
–––  
Qg  
V
Total Gate Charge  
Qgs  
Qgd  
RG  
td(on)  
tr  
nC  
Gate-to-Source Charge  
Gate-to-Drain Charge  
Gate Resistance  
I
Ω
–––  
–––  
Turn-On Delay Time  
Rise Time  
VDD = 15V, VGS = 4.5V  
–––  
–––  
–––  
–––  
–––  
–––  
ID = 8.5A  
RG=1.8Ω  
See Fig.17  
VGS = 0V  
ns  
pF  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
5.2  
5.0  
600  
100  
46  
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
VDS = 25V  
ƒ = 1.0MHz  
Diode Characteristics  
Parameter  
Min. Typ. Max. Units  
Conditions  
D
IS  
Continuous Source Current  
MOSFET symbol  
–––  
–––  
8.5  
G
showing the  
integral reverse  
(Body Diode)  
Pulsed Source Current  
A
S
ISM  
–––  
–––  
76  
p-n junction diode.  
(Body Diode)  
VSD  
trr  
T = 25°C, I = 8.5A , V = 0V  
Diode Forward Voltage  
–––  
–––  
–––  
–––  
11  
1.0  
17  
20  
V
J
S
GS  
T = 25°C, I = 8.5A , VDD = 13V  
Reverse Recovery Time  
Reverse Recovery Charge  
Forward Turn-On Time  
ns  
nC  
J
F
Qrr  
ton  
di/dt = 330 A/μs  
13  
Time is dominated by parasitic Inductance  
Thermal Resistance  
Parameter  
Typ.  
–––  
–––  
–––  
–––  
Max.  
13  
90  
60  
42  
Units  
Junction-to-Case  
Junction-to-Case  
RθJC (Bottom)  
RθJC (Top)  
°C/W  
Junction-to-Ambient  
Rθ  
JA  
Junction-to-Ambient (<10s)  
Rθ  
JA  
Notes:  
Repetitive rating; pulse width limited by max. junction temperature.  
‚Current limited by package.  
ƒPulse width 400μs; duty cycle 2%.  
„When mounted on 1 inch square copper board  
R is measured at TJ of approximately 90°C.  
θ
2
www.irf.com  

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