Datasheet > IRF710B

IRF710B

更新时间： 2024-10-29 22:24:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
10页	860K
描述
400V N-Channel MOSFET

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IRF710B 数据手册

November 2001

IRF710B/IRFS710B

400V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supplies and

electronic lamp ballasts based on half bridge.

•

2.0A, 400V, R

= 3.4Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 7.7 nC)

Low Crss ( typical 6.0 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

TO-220

IRF Series

TO-220F

IRFS Series

D S

G D

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

IRF710B

IRFS710B

Units

Drain-Source Voltage

400

DSS

- Continuous (T = 25°C)

Drain Current

2.0

1.3

6.0

2.0 *

1.3 *

6.0 *

- Continuous (T = 100°C)

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 30

100

2.0

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

3.6

V/ns

dv/dt

5.5

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.29

0.19

W/°C

°C

T , T

-55 to +150

300

STG

Maximum lead temperature for soldering purposes,

°C

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

Parameter

IRF710B

IRFS710B

5.37

Units

°C/W

Thermal Resistance, Junction-to-Case Max.

Thermal Resistance, Case-to-Sink Typ.

3.44

0.5

θJC

θCS

Thermal Resistance, Junction-to-Ambient Max.

62.5

θJA

Rev. A, November 2001

12 3 4 5 6 7...10

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