Datasheet > IRF450

IRF450

更新时间： 2024-02-03 05:59:05

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
7页	60K
描述
13A, 500V, 0.400 Ohm, N-Channel Power MOSFET

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IRF450 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.89	配置：	Single
最大漏极电流 (Abs) (ID)：	13 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e0	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	125 W	子类别：	FET General Purpose Power
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

IRF450 数据手册

IRF450

Data Sheet

March 1999

File Number 1827.3

13A, 500V, 0.400 Ohm, N-Channel

Power MOSFET

Features

• 13A, 500V

• r = 0.400Ω

This N-Channel enhancement mode silicon gate power ﬁeld

effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a speciﬁed level of

energy in the breakdown avalanche mode of operation. All of

these power MOSFETs are designed for applications such

as switching regulators, switching convertors, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Formerly developmental type TA17435.

Ordering Information

Symbol

PART NUMBER

PACKAGE

BRAND

IRF450

TO-204AA

NOTE: When ordering, include the entire part number.

Packaging

JEDEC TO-204AA

DRAIN

(FLANGE)

SOURCE (PIN 2)

GATE (PIN 1)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

12 3 4 5 6 7

中文翻译

下载PDF

与IRF450相关器件

型号	品牌	获取价格	描述	数据表
IRF450_10	SEME-LAB	获取价格	N-CHANNEL POWER MOSFET
IRF450E	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta
IRF450EB	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta
IRF450EBPBF	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta
IRF450EC	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta
IRF450ECPBF	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta
IRF450ED	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta
IRF450EDPBF	INFINEON	获取价格	12A, 500V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
IRF450EPBF	INFINEON	获取价格	Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta
IRF450R	NJSEMI	获取价格	Trans MOSFET N-CH 500V 13A 3-Pin(2+Tab) TO-3