5秒后页面跳转
IRF460 PDF预览

IRF460

更新时间: 2024-11-24 22:51:35
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
7页 143K
描述
TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=0.27ohm, Id=21)

IRF460 数据手册

 浏览型号IRF460的Datasheet PDF文件第2页浏览型号IRF460的Datasheet PDF文件第3页浏览型号IRF460的Datasheet PDF文件第4页浏览型号IRF460的Datasheet PDF文件第5页浏览型号IRF460的Datasheet PDF文件第6页浏览型号IRF460的Datasheet PDF文件第7页 
PD-90467  
REPETITIVEAVALANCHEANDdv/dtRATED  
HEXFET TRANSISTORS  
IRF460  
500V, N-CHANNEL  
THRU-HOLE (TO-204AA/AE)  
Product Summary  
Part Number BVDSS RDS(on)  
IRF460 500V 0.27Ω  
ID  
21  
The HEXFET technology is the key to International  
Rectifier’s advanced line of power MOSFET transistors.  
The efficient geometry and unique processing of this latest  
“State of the Art” design achieves: very low on-state resis-  
tance combined with high transconductance; superior re-  
verse energy and diode recovery dv/dt capability.  
TO-3  
The HEXFET transistors also feature all of the well estab-  
lished advantages of MOSFETs such as voltage control,  
very fast switching, ease of paralleling and temperature  
stability of the electrical parameters.  
Features:  
n
n
n
n
n
Repetitive Avalanche Ratings  
Dynamic dv/dt Rating  
Hermetically Sealed  
Simple Drive Requirements  
Ease of Paralleling  
They are well suited for applications such as switching  
power supplies, motor controls, inverters, choppers, audio  
amplifiers and high energy pulse circuits.  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 0V, T = 25°C  
Continuous Drain Current  
Continuous Drain Current  
Pulsed Drain Current  
Max. Power Dissipation  
Linear Derating Factor  
21  
14  
D
GS  
C
A
I
D
= 0V, T = 100°C  
C
GS  
I
84  
DM  
@ T = 25°C  
P
300  
W
W/°C  
V
D
C
2.4  
V
GS  
Gate-to-Source Voltage  
±20  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
1200  
21  
mJ  
AS  
I
A
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
30  
mJ  
AR  
dv/dt  
3.5  
V/ns  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
Lead Temperature  
Weight  
300 (0.063 in. (1.6mm) from case for 10s)  
11.5(typical)  
For footnotes refer to the last page  
www.irf.com  
1
01/24/01  

IRF460 替代型号

型号 品牌 替代类型 描述 数据表
IRF460 SEME-LAB

功能相似

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

与IRF460相关器件

型号 品牌 获取价格 描述 数据表
IRF460PBF INFINEON

获取价格

REPETITIVE AVALANCHE AND dv/dt RATED HEXFETï›
IRF460SCX INFINEON

获取价格

500V Single N-Channel Hi-Rel MOSFET in a TO-204AE package - Screening Level TX
IRF-4610000UH+/-5% VISHAY

获取价格

General Fixed Inductor, 1 ELEMENT, 10000 uH, GENERAL PURPOSE INDUCTOR, AXIAL LEADED
IRF-4610000UH+-5%ERE3 VISHAY

获取价格

General Purpose Inductor, 10000uH, 5%, Ferrite-Core,
IRF-461000UH+/-10% VISHAY

获取价格

General Fixed Inductor, 1 ELEMENT, 1000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL
IRF-461000UH5% VISHAY

获取价格

General Fixed Inductor, 1 ELEMENT, 1000 uH, GENERAL PURPOSE INDUCTOR, AXIAL LEADED
IRF-4612000UH+/-10% VISHAY

获取价格

General Fixed Inductor, 1 ELEMENT, 12000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL
IRF-4612000UH10% VISHAY

获取价格

General Fixed Inductor, 1 ELEMENT, 12000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL
IRF-461200UH+/-10% VISHAY

获取价格

General Fixed Inductor, 1 ELEMENT, 1200 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL
IRF-461200UH+-10%ERE3 VISHAY

获取价格

General Purpose Inductor, 1200uH, 10%, Ferrite-Core,