是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.79 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 8 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e0 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 40 W | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF120-123 | FAIRCHILD |
获取价格 |
N-Channel Power MOSFETs, 11 A, 60-100 V | |
IRF1205 | ETC |
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IRF120E | INFINEON |
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Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se | |
IRF120EA | INFINEON |
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Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se | |
IRF120EB | INFINEON |
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Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se | |
IRF120ED | INFINEON |
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Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se | |
IRF120PBF | INFINEON |
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Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Me | |
IRF121 | INTERSIL |
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8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs | |
IRF121 | FAIRCHILD |
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N-Channel Power MOSFETs, 11 A, 60-100 V | |
IRF121 | SAMSUNG |
获取价格 |
N-CHANNEL POWER MOSFETS |