型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF121 | INTERSIL |
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8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs | |
IRF121 | FAIRCHILD |
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N-Channel Power MOSFETs, 11 A, 60-100 V | |
IRF121 | SAMSUNG |
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N-CHANNEL POWER MOSFETS | |
IRF122 | FAIRCHILD |
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N-Channel Power MOSFETs, 11 A, 60-100 V | |
IRF122 | SAMSUNG |
获取价格 |
N-CHANNEL POWER MOSFETS | |
IRF122 | INTERSIL |
获取价格 |
8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs | |
IRF122 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.36ohm, 1-Element, N-Channel, Silicon, Me | |
IRF-122+/-10% | VISHAY |
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General Fixed Inductor, 1 ELEMENT, 22 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LE | |
IRF-122010% | VISHAY |
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General Fixed Inductor, 1 ELEMENT, 220 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR | |
IRF-1220UH+-10%ESE2 | VISHAY |
获取价格 |
General Purpose Inductor, 220uH, 10%, Ferrite-Core, |