Datasheet > IPW50R190CE

IPW50R190CE

更新时间： 2024-02-26 01:31:02

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
2页	1164K
描述
500V CoolMOSâ¢ CE Power MOSFET

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中文翻译

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技术参数
数据手册

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IPW50R190CE 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	TO-247
包装说明：	FLANGE MOUNT, R-PSFM-T3	针数：	3
Reach Compliance Code：	compliant	Factory Lead Time：	1 week
风险等级：	5.8	雪崩能效等级（Eas）：	339 mJ
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	500 V
最大漏源导通电阻：	0.19 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-247	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	63 A	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

IPW50R190CE 数据手册

Product Brief

500V CoolMOS™ CE Power MOSFET

IPP50R500CE vs. Standard MOS

hard commutation on conducting body diode; half bridge conﬁguration

High Side MOS = Low Side MOS, same R_G,sum= 5Ω

Simplified test circuit

500

490

480

470

460

450

440

430

420

410

400

R_G,ext

I_F

IPP50R500CE

Standard MOS

DUT

V_DS

145µH

R_G,ext

I_SD

simpliﬁed waveform when switching ON of High Side

MOSFET for 2nd time (double pulse)

I_SD

V_{DS max}

dI_F/ dt

I_F

12V lower drain

source overshoot

400V

dI_rr/ dt

I_mm

V_DS

5 6

From I_F=1 to I_F=4A better behaviour observed of 500V CE

I_F> 4A same behaviour

I_F, forward current through body diode [A]

Body diode conduction < 2µs before turn-oﬀ

Product Portfolio CoolMOS™ CE

IPAK

TO-220

FullPAK

TO-252

DPAK

TO-220

TO-247

R_DS(on)

3000 mΩ

2000 mΩ

1400 mΩ

950 mΩ

800 mΩ

650 mΩ

500 mΩ

380 mΩ

280 mΩ

190 mΩ

IPD50R3k0CE*

IPD50R2k0CE**

IPD50R1k4CE*

IPD50R950CE

IPD50R800CE*

IPD50R650CE*

IPD50R500CE

IPD50R380CE*

IPD50R280CE

IPU50R3k0CE*

IPU50R2k0CE**

IPU50R1k4CE*

IPU50R950CE*

IPA50R950CE

IPA50R800CE*

IPA50R650CE*

IPA50R500CE

IPA50R380CE*

IPA50R280CE

IPA50R190CE*

IPP50R500CE

IPP50R380CE*

IPP50R280CE

IPP50R190CE*

IPW50R280CE

IPW50R190CE*

Applications Consumer

Consumer, Lighting

PC Silverbox

SSL: Solid State Lighting

* Samples available by Q3 / 2012

** Samples available by Q4 / 2012

Published by

ATTEꢀTꢁOꢀ ꢂꢃEASE!

WAꢄꢀꢁꢀgS

Infineon Technologies Austria AG

9500 Villach, Austria

The information given in this document shall in no event

be regarded as a guarantee of conditions or characteristics

(“Beschaﬀenheitsgarantie”). With respect to any examples

or hints given herein, any typical values stated herein and/

or any information regarding the application of the device,

Inﬁneon Technologies hereby disclaims any and all warran-

ties and liabilities of any kind, including without limita-

tion warranties of non-infringement of intellectual property

rights of any third party.

Due to technical requirements components may contain

dangerous substances. For information on the types in

question please contact your nearest Inﬁneon Technologies

Oﬃce. Inﬁneon Technologies Components may only be

used in life-support devices or systems with the express

written approval of Inﬁneon Technologies, if

a failure of

Visit us:

www.infineon.com

such components can reasonably be expected to cause

the failure of that life-support device or system, or to aﬀect

the safety or eﬀectiveness of that device or system. Life

support devices or systems are intended to be implanted

in the human body, or to support and/or maintain and

sustain and/or protect human life. If they fail, it is reason-

able to assume that the health of the user or other persons

may be endangered.

ꢁꢀFOꢄMATꢁOꢀ

For further information on technology, delivery terms and

conditions and prices please contact your nearest Inﬁneon

Technologies Oﬃce (www.inﬁneon.com).

Order Number: B152-H9688-X-X-7600-DB2012-0003

Date: 10 / 2012

中文翻译

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与IPW50R190CE相关器件

型号	品牌	获取价格	描述	数据表
IPW50R190CEFKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
IPW50R199CP	INFINEON	获取价格	CoolMOS Power Transistor
IPW50R250CP	INFINEON	获取价格	CoolMOSTM Power Transistor Features New revolutionary high voltage technology
IPW50R250CPFKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 13A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Met
IPW50R280CE	INFINEON	获取价格	500V CoolMOSâ¢ CE Power MOSFET
IPW50R299CP	INFINEON	获取价格	CoolMOSTM Power Transistor Features Extreme dv/dt rated High peak current capability
IPW50R350CP	INFINEON	获取价格	CoolMOSTM Power Transistor Features Ultra low gate charge Extreme dv/dt rated
IPW50R350CPFKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 10A I(D), 500V, 0.35ohm, 1-Element, N-Channel, Silicon, Met
IPW50R350CPXK	INFINEON	获取价格	Power Field-Effect Transistor, 10A I(D), 500V, 0.35ohm, 1-Element, N-Channel, Silicon, Met
IPW50R399CP	INFINEON	获取价格	CoolMOS Power Transistor

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