Datasheet > IPDQ60R022S7A

IPDQ60R022S7A

更新时间： 2023-12-06 20:11:08

品牌	Logo	应用领域
英飞凌 - INFINEON		功率因数校正
页数	文件大小	规格书
14页	1456K
描述
The automotive qualified AEC-Q101, 600 V CoolMOS? S7A SJ MOSFET?family is optimized to offer low conduction losses and features the lowest RDS(on)?in the market when it comes to high-voltage SJ MOSFETs. It comes with an unprecedented RDS(on)?x price figure of merit and is a perfect fit for HV eFuse, HV eDisconnect and?on-board charger?PFC stage in an active line configuration.

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IPDQ60R022S7A 数据手册

600VꢀCoolMOSªꢀSJꢀS7AꢀPowerꢀDevice

IPDQ60R022S7A

3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics

atꢀT_j=25°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics

The CoolMOS mentioned in this datasheet shall not be operated in linear mode.

For any questions in this regard, please contact Infineon sales office.

For applications with applied blocking voltage >70% of the specified blocking voltage, it is required that the customer

evaluates the impact of cosmic radiation effect in early design phase and contacts the Infineon sales office for the

necessary technical support by Infineon

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

600

3.5

Typ.

Max.

Drain-source breakdown voltage

Gate threshold voltage

V_(BR)DSS

V_(GS)th

V_GS=0V,ꢀI_D=1mA

4.0

4.5

V_DS=V_GS,ꢀI_D=1.44mA

V_DS=600V,ꢀV_GS=0V,ꢀT_j=25°C

V_DS=600V,ꢀV_GS=0V,ꢀT_j=150°C

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

I_DSS

µA

Ω

I_GSS

100

V_GS=20V,ꢀV_DS=0V

0.02

0.046

0.022

V_GS=12V,ꢀI_D=23A,ꢀT_j=25°C

V_GS=12V,ꢀI_D=23A,ꢀT_j=150°C

R_DS(on)

R_G

0.8

Ω

f=1MHz,ꢀopenꢀdrain

Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics

External parasitic elements (PCB layout) influence switching behavior significantly.

Stray inductances and coupling capacitances must be minimized.

For layout recommendations please use provided application notes or contact Infineon sales office.

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Typ.

5640

Max.

Input capacitance

Output capacitance

C_iss

V_GS=0V,ꢀV_DS=300V,ꢀf=250kHz

C_oss

Effective output capacitance, energy

related¹⁾

C_o(er)

303

V_GS=0V,ꢀV_DS=0ꢀtoꢀ300V

Effective output capacitance, time

related²⁾

C_o(tr)

Q_oss

t_d(on)

2678

803

I_D=constant,ꢀV_GS=0V,ꢀV_DS=0ꢀtoꢀ300V

V_GS=0V,ꢀV_DS=0ꢀtoꢀ300V

Output charge

V_DD=300V,ꢀV_GS=13V,ꢀI_D=23A,

R_G=5.3Ω;ꢀseeꢀtableꢀ9

Turn-on delay time

V_DD=300V,ꢀV_GS=13V,ꢀI_D=23A,

R_G=5.3Ω;ꢀseeꢀtableꢀ9

Rise time

t_r

V_DD=300V,ꢀV_GS=13V,ꢀI_D=23A,

R_G=5.3Ω;ꢀseeꢀtableꢀ9

Turn-off delay time

Fall time

t_d(off)

t_f

150

V_DD=300V,ꢀV_GS=13V,ꢀI_D=23A,

R_G=5.3Ω;ꢀseeꢀtableꢀ9

¹⁾ꢀC_o(er)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀC_ossꢀwhileꢀV_DSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ300V

²⁾ꢀC_o(tr)ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀC_ossꢀwhileꢀV_DSꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ300V

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2022-11-23

1 2 3 456 7 8...14

下载PDF

与IPDQ60R022S7A相关器件

型号	品牌	描述	获取价格	数据表
IPDQ60R025CFD7	INFINEON	The?600 V CoolMOS? CFD7?is Infineon’s latest	获取价格
IPDQ60R035CFD7	INFINEON	The?600 V CoolMOS? CFD7?is Infineon’s latest	获取价格
IPDQ60R037CM8	INFINEON	The 600 V CoolMOS? 8 SJ MOSFETs series is the successor to the 600 V CoolMOS? 7 MOSFET fam	获取价格
IPDQ60R040S7	INFINEON	在采用紧凑型 SMD 封装的高压超结 MOSFET 中，600V CoolMOS™ S7	获取价格
IPDQ60R040S7A	INFINEON	The automotive qualified AEC-Q101, 600 V Cool	获取价格
IPDQ60R045CFD7	INFINEON	The?600 V CoolMOS? CFD7?is Infineon’s latest	获取价格

与IPDQ60R022S7A相关文章

STM32H743技术深度剖析与应用案例探索
2024-05-30

15
LM321中文资料解析：引脚功能介绍、技术特点、技术特性分析
2024-05-30

15
74HC14芯片资料介绍：性能特性分析、引脚介绍
2024-05-30

13
LM1875芯片手册：功放参数分析、引脚说明、电路设计要点
2024-05-30

10

产品中心

服务支持

精选活动

关于我们

帮助中心

IPDQ60R022S7A

IPDQ60R022S7A 数据手册

与IPDQ60R022S7A相关器件

与IPDQ60R022S7A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IPDQ60R022S7A

IPDQ60R022S7A 数据手册

与IPDQ60R022S7A相关器件

与IPDQ60R022S7A相关文章

您还可以找

您在本页遇到什么问题？