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IPDQ65R099CFD7 PDF预览

IPDQ65R099CFD7

更新时间： 2024-11-06 14:54:59
品牌 Logo 应用领域
英飞凌 - INFINEON 光电二极管
页数 文件大小 规格书
14页 1317K
描述
Infineon’s?650 V CoolMOS? CFD7?superjunction MOSFET IPDQ65R099CFD7 in a QDPAK package is ideally suited for resonant topologies in industrial applications, such as?server,?telecom,?solar, and?EV-charging stations, in which it enables significant efficiency improvements compared to competition.? As a successor to the?CFD2 SJ MOSFET?family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50 V breakdown voltage.

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IPDQ65R099CFD7 数据手册

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IPDQ65R099CFD7  
MOSFET  
PG-HDSOP-22  
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice  
Theꢀlatestꢀ650ꢀVꢀCoolMOS™ꢀCFD7ꢀextendsꢀtheꢀvoltageꢀclassꢀofferingꢀof  
theꢀCFD7ꢀfamilyꢀandꢀisꢀaꢀsuccessorꢀtoꢀtheꢀ650ꢀVꢀCoolMOS™ꢀCFD2.  
Resultingꢀfromꢀimprovedꢀswitchingꢀperformanceꢀandꢀexcellentꢀthermal  
behavior,ꢀ650ꢀVꢀCooMOS™ꢀCFD7ꢀoffersꢀhighestꢀefficiencyꢀinꢀresonant  
switchingꢀtopologies,ꢀsuchꢀasꢀLLCꢀandꢀphase-shift-full-bridgeꢀ(ZVS).ꢀAs  
partꢀofꢀInfineon’sꢀfastꢀbodyꢀdiodeꢀportfolio,ꢀthisꢀnewꢀproductꢀseriesꢀblends  
allꢀadvantagesꢀofꢀaꢀfastꢀswitchingꢀtechnologyꢀtogetherꢀwithꢀsuperiorꢀhard  
commutationꢀrobustness.ꢀTheꢀCoolMOS™ꢀCFD7ꢀtechnologyꢀmeets  
highestꢀefficiencyꢀandꢀreliabilityꢀstandardsꢀandꢀfurthermoreꢀsupportsꢀhigh  
powerꢀdensityꢀsolutions.  
22  
12  
TAB  
1
11  
Features  
Drain  
Pin 12-22, Tab  
•ꢀUltra-fastꢀbodyꢀdiode  
•ꢀ650Vꢀbreakꢀdownꢀvoltage  
•ꢀBest-in-classꢀRDS(on)  
*1  
Gate  
Pin 1  
*2  
•ꢀReducedꢀswitchingꢀlosses  
•ꢀLowꢀRDS(on)ꢀdependencyꢀoverꢀtemperature  
Driver  
Source  
Pin 2  
Power  
Source  
Pin 3-11  
*1: Internal body diode  
*2: Integrated ESD diode  
Benefits  
•ꢀExcellentꢀhardꢀcommutationꢀruggedness  
•ꢀExtraꢀsafetyꢀmarginꢀforꢀdesignsꢀwithꢀincreasedꢀbusꢀvoltage  
•ꢀEnablingꢀincreasedꢀpowerꢀdensityꢀsolutions  
•ꢀOutstandingꢀlightꢀloadꢀefficiencyꢀinꢀindustrialꢀSMPSꢀapplications  
•ꢀImprovedꢀfullꢀloadꢀefficiencyꢀinꢀindustrialꢀSMPSꢀapplications  
Potentialꢀapplications  
Optimizedꢀforꢀphase-shiftꢀfull-bridgeꢀ(ZVS),ꢀLLCꢀApplicationsꢀ–ꢀServer,  
Telecom,ꢀEVꢀCharging,ꢀSolar  
Productꢀvalidation  
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications  
Pleaseꢀnote:ꢀTheꢀsourceꢀandꢀsenseꢀsourceꢀpinsꢀareꢀnotꢀexchangeable.  
Theirꢀexchangeꢀmightꢀleadꢀtoꢀmalfunction.ꢀForꢀparallelingꢀ4pinꢀMOSFET  
devicesꢀtheꢀplacementꢀofꢀtheꢀgateꢀresistorꢀisꢀgenerallyꢀrecommendedꢀtoꢀbe  
onꢀtheꢀDriverꢀSourceꢀinsteadꢀofꢀtheꢀGate.  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
VDS @ Tj,max  
RDS(on),max  
Value  
700  
99  
Unit  
V
mΩ  
nC  
A
Qg,typ  
39  
ID,pulse  
82  
Eoss @ 400V  
Body diode diF/dt  
6.1  
µJ  
1300  
A/µs  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
IPDQ65R099CFD7  
PG-HDSOP-22  
65R099F7  
see Appendix A  
Final Data Sheet  
1
Rev.ꢀ2.0,ꢀꢀ2022-08-29  
1234567...14

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