Datasheet > IMX25

IMX25

更新时间： 2024-09-16 23:15:03

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
5页	90K
描述
General purpose transistor (isolated dual transistors)

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IMX25 数据手册

IMX25

Transistors

General purpose transistor

(isolated dual transistors)

IMX25

zExternal dimensions (Unit : mm)

zFeatures

1) Two 2SD2704K chips in a SMT package.

2) Mounting possible with SMT3 automatic mounting machine.

3) Transistorelementsareindependent,eliminating interference.

4) Mounting cost and area can be cut in half.

2.9±0.2

1.9±0.2

+0.2

−0.1

1.1

0.8±0.1

0.95 0.95

(5)

(4)

(6)

(1)

0 to 0.1

zStructure

Epitaxial planar type

NPN silicon transistor

(2)

(3)

+0.1

0.15

0.3

−0.06

−0.05

All terminals have same dimensions

ROHM : SMT6

EIAJ : SC-74

The following characteristics apply to both Tr¹and Tr2.

Abbreviated symbol: X25

zAbsolute maximum ratings (Ta=25°C)

zEquivalent circuit

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Limits

Unit

(4) (5) (6)

Tr₁

Tr₂

300

°C

(3) (2) (1)

Power dissipation

300(TOTAL)

150

∗

Junction temperature

Storage temperature

Tstg

−55 to +150

200mW per element must not be exceeded.

∗

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min.

Typ.

Max.

Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

BV^CBO

BVCEO

BVEBO

−

=10µA

=1mA

−

=10µA

CB=50V

EB=25V

CBO

EBO

CE(sat)

−

0.1

100

2700

−

µA

Emitter cutoff current

−

Collector-emitter saturation voltage

DC current transfer ratio

−

CE=2V, I

CE=6V, I

CB=10V, I

=5mA, V=100mVrms, f=1kHz

=30mA/3mA

=4mA

=−4mA, f=10MHz

=0A, f=1MHz

820

−

3.9

0.7

MHz

Ω

Transition frequency

Output capacitance

Output On-resistance

Cob

Ron

−

1/4

12 3 4 5

中文翻译

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