Datasheet > IMX25_10

IMX25_10

更新时间： 2024-11-25 05:39:15

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
4页	140K
描述
General purpose transistor (isolated dual transistors)

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IMX25_10 数据手册

General purpose transistor

(isolated dual transistors)

IMX25

Features

Dimensions (Unit : mm)

1)Two 2SD2704K chips in a SMT package.

2)Mounting possible with SMT3 automatic mounting machine.

3)Transistorelementsareindependent,eliminating interference.

4)Mounting cost and area can be cut in half.

2.9±0.2

1.9±0.2

+0.2

−0.1

1.1

0.8±0.1

0.95 0.95

(5)

(4)

(6)

(1)

0 to 0.1

Structure

Epitaxial planar type

NPN silicon transistor

(2)

(3)

+0.1

−0.06

+0.1

0.15

0.3

−0.05

All terminals have same dimensions

The following characteristics apply to both Tr¹and Tr2.

ROHM : SMT6

EIAJ : SC-74

Abbreviated symbol: X25

Absolute maximum ratings (Ta=25C)

Inner circuit

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

Limits

Unit

(4) (5) (6)

VCBO

VCEO

VEBO

Tr₁

Tr₂

300

°C

(3) (2) (1)

Power dissipation

300(TOTAL)

150

∗

Junction temperature

Storage temperature

Tstg

−55 to +150

200mW per element must not be exceeded.

∗

Electrical characteristics (Ta=25C)

Symbol Min.

Typ.

−

Max.

Unit

Conditions

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

BV^CBO

−

=10μA

=1mA

BVCEO

BVEBO

−

=10μA

CB=50V

EB=25V

CBO

EBO

CE(sat)

−

0.1

100

2700

−

μA

−

Emitter cutoff current

−

Collector-emitter saturation voltage

DC current transfer ratio

Transition frequency

−

/I =30mA/3mA

CE=2V, I =4mA

CE=6V, I =−4mA, f=10MHz

CB=10V, I =0A, f=1MHz

=5mA, V=100mVrms, f=1kHz

820

−

3.9

0.7

MHz

Cob

Ron

−

Output capacitance

Output On-resistance

−

Packaging specifications

Packaging type

Taping

Code

T110

3000

Part No.

IMX25

Basic ordering unit (pieces)

www.rohm.com

2010.02 - Rev.B

1/3

12 3 4

中文翻译

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