Datasheet > IDT71V65902

IDT71V65902

更新时间： 2024-11-04 05:39:07

品牌	Logo	应用领域
其他 - ETC		计数器静态存储器
页数	文件大小	规格书
26页	495K
描述
256K x 36, 512K x 18 3.3V Synchronous ZB TM SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs

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IDT71V65902 数据手册

256K x 36, 512K x 18

IDT71V65702

IDT71V65902

3.3VSynchronousZBT™SRAMs

2.5V I/O, Burst Counter

Flow-ThroughOutputs

Features

◆

256K x 36, 512K x 18 memory configurations

Supports high performance system speed - 100 MHz

(7.5 ns Clock-to-Data Access)

occurs,beitreadorwrite.

◆

TheIDT71V65702/5902containaddress,data-inandcontrolsignal

registers.Theoutputsareflow-through(nooutputdataregister).Output

enable is the only asynchronous signal and can be used to disable the

outputsatanygiventime.

ZBT^TMFeature - No dead cycles between write and read

cycles

Internally synchronized output buffer enable eliminates the

need to control OE

Single R/W (READ/WRITE) control pin

4-word burst capability (Interleaved or linear)

Individual byte write (BW¹-BW⁴) control (May tie active)

Three chip enables for simple depth expansion

3.3V power supply (±5%)

2.5V (±5%) I/O Supply (VDDQ)

Power down controlled by ZZ input

Packaged in a JEDEC standard 100-pin plastic thin quad

flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch

ball grid array (fBGA).

AClockEnable(CEN)pinallowsoperationoftheIDT71V65702/5902

tobesuspendedaslongasnecessary.Allsynchronousinputsareignored

whenCENishighandtheinternaldeviceregisterswillholdtheirprevious

values.

There are three chip enable pins (CE1, CE2, CE2) that allow the

usertodeselectthedevicewhendesired.Ifanyoneofthesethreeisnot

assertedwhenADV/LDislow,nonewmemoryoperationcanbeinitiated.

However,anypendingdatatransfers(readsorwrites)willbecompleted.

Thedatabuswilltri-stateonecycleafterthechipisdeselectedorawrite

isinitiated.

TheIDT71V65702/5902haveanon-chipburstcounter.Intheburst

mode,theIDT71V65702/5902canprovidefourcyclesofdataforasingle

address presented to the SRAM. The order of the burst sequence is

defined by the LBO input pin. The LBO pin selects between linear and

interleaved burst sequence. The ADV/LD signal is used to load a new

externaladdress(ADV/LD=LOW)orincrementtheinternalburstcounter

(ADV/LD = HIGH).

TheIDT71V65702/5902SRAMsutilizeIDT’slatesthigh-performance

CMOSprocess,andarepackagedinaJEDECStandard14mmx20mm

100-pin plasticthinquadflatpack(TQFP)aswellasa119 ballgridarray

(BGA) and 165 fine pitch ball grid array (fBGA).

◆

Description

The IDT71V65702/5902 are 3.3V high-speed 9,437,184-bit

(9 Megabit) synchronous SRAMs organized as 256K x 36 / 512K x

18.Theyaredesignedtoeliminatedeadbuscycleswhenturningthe

busaroundbetweenreadsandwrites,orwritesandreads.Thusthey

havebeengiventhenameZBT ,orZeroBusTurnaround.

AddressandcontrolsignalsareappliedtotheSRAMduringone

clock cycle, and on the next clock cycle the associated data cycle

PinDescriptionSummary

A -A

Address Inputs

Input

I/ O

Synchronous

Asynchronous

Synchronous

N/A

Chip Enables

CE , CE , CE

Output Enable

R/W

Read/Write Signal

Clock Enable

CEN

Individual Byte Write Selects

Clock

BW , BW , BW , BW

CLK

ADV/LD

Advance Burst Address/Load New Address

Linear/Interleaved Burst Order

Sleep Mode

Synchronous

Static

LBO

Asynchronous

Synchronous

Static

I/ O0-I/O31, I/OP1-I/OP4

Data Input/Output

Co re Powe r, I/O Powe r

Ground

DD DDQ

, V

Supply

Static

5315 tbl 01

ZBT and Zero Bus Turnaround are trademarks of Integrated Device Technology, Inc. and the architecture is supported by Micron Technology and Motorola, Inc.

OCTOBER 2004

DSC-5315/08

12 3 4 5 6 7...26

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与IDT71V65902相关器件

型号	品牌	获取价格	描述	数据表
IDT71V65902S75BQ	IDT	获取价格	ZBT SRAM, 512KX18, 7.5ns, CMOS, PBGA165, 13 X 15 MM, FPBGA-165
IDT71V65902S75BQG	IDT	获取价格	ZBT SRAM, 512KX18, 7.5ns, CMOS, PBGA165, 13 X 15 MM, FPBGA-165
IDT71V65902S80BG	IDT	获取价格	ZBT SRAM, 512KX18, 8ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119
IDT71V65902S80BG8	IDT	获取价格	ZBT SRAM, 512KX18, 8ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119
IDT71V65902S80BGG	IDT	获取价格	ZBT SRAM, 512KX18, 8ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119
IDT71V65902S80BGGI	IDT	获取价格	ZBT SRAM, 512KX18, 8ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119
IDT71V65902S80BGI	IDT	获取价格	ZBT SRAM, 512KX18, 8ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, BGA-119
IDT71V65902S80BQ	IDT	获取价格	ZBT SRAM, 512KX18, 8ns, CMOS, PBGA165, 13 X 15 MM, FPBGA-165
IDT71V65902S80BQGI	IDT	获取价格	ZBT SRAM, 512KX18, 8ns, CMOS, PBGA165, 13 X 15 MM, FPBGA-165
IDT71V65902S80PFG	IDT	获取价格	ZBT SRAM, 512KX18, 8ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100

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