Datasheet > IDT71V3579YS85BGI

IDT71V3579YS85BGI

更新时间： 2023-05-15 00:00:00

品牌	Logo	应用领域
艾迪悌 - IDT		静态存储器
页数	文件大小	规格书
22页	236K
描述
Cache SRAM, 256KX18, 8.5ns, CMOS, PBGA119, BGA-119

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IDT71V3579YS85BGI 数据手册

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IDT71V3577YS_79YS, IDT71V3577YSA_79YSA, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with

3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect

Commercial and Industrial Temperature Ranges

OrderingInformation

IDT

XXX

Power Speed

Package

Process/

Temperature

Range

Device

Type

Blank

Commercial (0°C to +70°C)

Industrial (-40°C to +85°C)

Restricted hazardous substance device

PF**

100-pin Plastic Thin Quad Flatpack (TQFP)

119 Ball Grid Array (BGA)

165 Fine Pitch Ball Grid Array (fBGA)

65*

75*

Access Time in Tenths of Nanoseconds

Standard Power

Standard Power with JTAG Interface

Y Generation die step

71V3577 128K x 36 Flow-Through Burst Synchronous SRAM with 3.3V

71V3579 I/O

256K x 18 Flow-Through Burst Synchronous SRAM with 3.3V

I/O

6450 drw 12

*Commercial temperature range only.

** JTAG (SA version) is not available with 100 pin TQFP package

PackageInformation

100-Pin Thin Quad Plastic Flatpack (TQFP)

119 Ball Grid Array (BGA)

165 Fine Pitch Ball Grid Array (fBGA)

Information available on the IDT website

6.42

1...18 19 202122

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与IDT71V3579YS85BGI相关器件

型号	品牌	描述	获取价格	数据表
IDT71V3579YS85BQ	IDT	Cache SRAM, 256KX18, 8.5ns, CMOS, PBGA165, FBGA-165	获取价格
IDT71V3579YS85BQG	IDT	128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter,	获取价格
IDT71V3579YS85BQGI	IDT	128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter,	获取价格
IDT71V3579YS85BQI	IDT	Cache SRAM, 256KX18, 8.5ns, CMOS, PBGA165, FBGA-165	获取价格
IDT71V3579YS85BQI8	IDT	Standard SRAM, 256KX18, 8.5ns, CMOS, PBGA165	获取价格
IDT71V3579YS85PF	IDT	Cache SRAM, 256KX18, 8.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, TQFP-100	获取价格