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IDT7164S35YG8 PDF预览

IDT7164S35YG8

更新时间: 2024-09-26 15:34:43
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
10页 622K
描述
Standard SRAM, 8KX8, 35ns, CMOS, PDSO28, 0.300 INCH, ROHS COMPLIANT, SOJ-28

IDT7164S35YG8 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOJ包装说明:0.300 INCH, ROHS COMPLIANT, SOJ-28
针数:28Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.63最长访问时间:35 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-J28
JESD-609代码:e3长度:17.9324 mm
内存密度:65536 bit内存集成电路类型:STANDARD SRAM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:28
字数:8192 words字数代码:8000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:8KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOJ封装等效代码:SOJ28,.34
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:5 V认证状态:Not Qualified
座面最大高度:3.556 mm最大待机电流:0.015 A
最小待机电流:4.5 V子类别:SRAMs
最大压摆率:0.09 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn) - annealed
端子形式:J BEND端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:7.5184 mmBase Number Matches:1

IDT7164S35YG8 数据手册

 浏览型号IDT7164S35YG8的Datasheet PDF文件第2页浏览型号IDT7164S35YG8的Datasheet PDF文件第3页浏览型号IDT7164S35YG8的Datasheet PDF文件第4页浏览型号IDT7164S35YG8的Datasheet PDF文件第5页浏览型号IDT7164S35YG8的Datasheet PDF文件第6页浏览型号IDT7164S35YG8的Datasheet PDF文件第7页 
CMOS Static RAM  
64K (8K x 8-Bit)  
IDT7164S  
IDT7164L  
Features  
Description  
High-speed address/chip select access time  
TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8K  
x8.Itisfabricatedusinghigh-performance,high-reliabilityCMOStech-  
nology.  
– Military:20/25/35/45/55/70/85/100ns(max.)  
– Industrial:20/25ns(max.)  
– Commercial: 20/25ns (max.)  
Addressaccesstimesasfastas20nsareavailableandthecircuitoffers  
a reduced power standby mode. When CS1 goes HIGH or CS2 goes  
LOW,thecircuitwillautomaticallygoto,andremainin,alow-powerstand-  
by mode. The low-power (L) version also offers a battery backup data  
retention capability at power supply levels as low as 2V.  
All inputs and outputs of the IDT7164 are TTL-compatible and  
operation is from a single 5V supply, simplifying system designs. Fully  
static asynchronous circuitry is used, requiring no clocks or refreshing  
for operation.  
Low power consumption  
Battery backup operation – 2V data retention voltage  
(L Version only)  
Produced with advanced CMOS high-performance  
technology  
Inputs and outputs directly TTL-compatible  
Three-state outputs  
Available in 28-pin DIP, CERDIP and SOJ  
Military product compliant to MIL-STD-883, Class B  
TheIDT7164ispackagedina28-pin300milCERDIP,a28-pin600  
mil CERDIP, 300mil Plastic DIP and 300mil SOJ  
Green parts available, see ordering information  
Militarygradeproductismanufacturedincompliancewith MIL-STD-  
883,ClassB,makingitideallysuitedtomilitarytemperatureapplications  
demandingthehighestlevelofperformanceandreliability.  
Functional Block Diagram  
A
0
VCC  
GND  
65,536 BIT  
MEMORY ARRAY  
ADDRESS  
DECODER  
A
12  
7
0
I/O  
0
I/O CONTROL  
7
I/O  
CS  
CS  
OE  
WE  
1
2
CONTROL  
LOGIC  
2967 drw 01  
DECEMBER 2016  
1
©2016 Integrated Device Technology, Inc.  
DSC-2967/17  

IDT7164S35YG8 替代型号

型号 品牌 替代类型 描述 数据表
7164S25YG8 IDT

完全替代

CMOS Static RAM 64K
CY7C185-35VC CYPRESS

功能相似

8K x 8 Static RAM
IDT7164S35Y IDT

功能相似

CMOS STATIC RAM 64K (8K x 8-BIT)

与IDT7164S35YG8相关器件

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IDT7164S35YGI IDT

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Standard SRAM, 8KX8, 35ns, CMOS, PDSO28, 0.300 INCH, ROHS COMPLIANT, PLASTIC, SOJ-28
IDT7164S35YGI8 IDT

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Standard SRAM, 8KX8, 35ns, CMOS, PDSO28, 0.300 INCH, ROHS COMPLIANT, SOJ-28
IDT7164S35YI IDT

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暂无描述
IDT7164S45D IDT

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CMOS STATIC RAM 64K (8K x 8-BIT)
IDT7164S45DB IDT

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CMOS STATIC RAM 64K (8K x 8-BIT)
IDT7164S45DI IDT

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Standard SRAM, 8KX8, 45ns, CMOS, CDIP28
IDT7164S45EB IDT

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Standard SRAM, 8KX8, 45ns, CMOS, CDFP28, CERPACK-28
IDT7164S45J ETC

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x8 SRAM
IDT7164S45L IDT

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Standard SRAM, 8KX8, 45ns, CMOS, CQCC32
IDT7164S45L28B IDT

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Standard SRAM, 8KX8, 45ns, CMOS, CQCC28, LCC-28