5秒后页面跳转
IDT7164S45TDB PDF预览

IDT7164S45TDB

更新时间: 2024-09-25 22:57:19
品牌 Logo 应用领域
艾迪悌 - IDT 存储内存集成电路静态存储器
页数 文件大小 规格书
9页 108K
描述
CMOS STATIC RAM 64K (8K x 8-BIT)

IDT7164S45TDB 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DIP
包装说明:DIP, DIP28,.3针数:28
Reach Compliance Code:not_compliantECCN代码:3A001.A.2.C
HTS代码:8542.32.00.41风险等级:5.34
Is Samacsys:N最长访问时间:45 ns
I/O 类型:COMMONJESD-30 代码:R-CDIP-T28
JESD-609代码:e0长度:37.1475 mm
内存密度:65536 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端口数量:1端子数量:28
字数:8192 words字数代码:8000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:8KX8
输出特性:3-STATE可输出:YES
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:DIP
封装等效代码:DIP28,.3封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:PARALLEL
峰值回流温度(摄氏度):225电源:5 V
认证状态:Not Qualified筛选级别:MIL-STD-883 Class B
座面最大高度:5.08 mm最大待机电流:0.02 A
最小待机电流:4.5 V子类别:SRAMs
最大压摆率:0.16 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:MILITARY端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:20
宽度:7.62 mmBase Number Matches:1

IDT7164S45TDB 数据手册

 浏览型号IDT7164S45TDB的Datasheet PDF文件第2页浏览型号IDT7164S45TDB的Datasheet PDF文件第3页浏览型号IDT7164S45TDB的Datasheet PDF文件第4页浏览型号IDT7164S45TDB的Datasheet PDF文件第5页浏览型号IDT7164S45TDB的Datasheet PDF文件第6页浏览型号IDT7164S45TDB的Datasheet PDF文件第7页 
IDT7164S  
IDT7164L  
CMOS STATIC RAM  
64K (8K x 8-BIT)  
Integrated Device Technology, Inc.  
FEATURES:  
DESCRIPTION:  
• High-speed address/chip select access time  
— Military: 20/25/30/35/45/55/70/85ns (max.)  
— Commercial: 15/20/25/35/70ns (max.)  
• Low power consumption  
• Battery backup operation — 2V data retention voltage  
(L Version only)  
• Produced with advanced CMOS high-performance  
technology  
• Inputs and outputs directly TTL-compatible  
• Three-state outputs  
The IDT7164 is a 65,536 bit high-speed static RAM orga-  
nized as 8K x 8. It is fabricated using IDT’s high-performance,  
high-reliability CMOS technology.  
Address access times as fast as 15ns are available and the  
circuit offers a reduced power standby mode. When CS1 goes  
HIGH or CS2 goes LOW, the circuit will automatically go to,  
and remain in, a low-power stand by mode. The low-power (L)  
version also offers a battery backup data retention capability  
at power supply levels as low as 2V.  
All inputs and outputs of the IDT7164 are TTL-compatible  
and operation is from a single 5V supply, simplifying system  
designs. Fully static asynchronous circuitry is used, requiring  
no clocks or refreshing for operation.  
• Available in:  
— 28-pin DIP and SOJ  
• Military product compliant to MIL-STD-883, Class B  
The IDT7164 is packaged in a 28-pin 300 mil DIP and SOJ;  
and 28-pin 600 mil DIP.  
Military grade product is manufactured in compliance with  
the latest revision of MIL-STD-883, Class B, making it ideally  
suited to military temperature applications demanding the  
highest level of performance and reliability.  
FUNCTIONAL BLOCK DIAGRAM  
A0  
VCC  
GND  
65,536 BIT  
ADDRESS  
DECODER  
MEMORY ARRAY  
A12  
7
0
I/O  
0
I/O CONTROL  
I/O 7  
CS1  
CS2  
OE  
CONTROL  
LOGIC  
2967 drw 01  
WE  
The IDT logo is a registered trademark of Integrated Device Technology, Inc.  
MILITARY AND COMMERCIAL TEMPERATURE RANGES  
MAY 1996  
1996 Integrated Device Technology, Inc.  
2967/8  
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.  
6.1  
1

与IDT7164S45TDB相关器件

型号 品牌 获取价格 描述 数据表
IDT7164S45TP IDT

获取价格

CMOS STATIC RAM 64K (8K x 8-BIT)
IDT7164S45TPB IDT

获取价格

CMOS STATIC RAM 64K (8K x 8-BIT)
IDT7164S45Y IDT

获取价格

CMOS STATIC RAM 64K (8K x 8-BIT)
IDT7164S45YB IDT

获取价格

CMOS STATIC RAM 64K (8K x 8-BIT)
IDT7164S55D IDT

获取价格

CMOS STATIC RAM 64K (8K x 8-BIT)
IDT7164S55DB IDT

获取价格

CMOS STATIC RAM 64K (8K x 8-BIT)
IDT7164S55DI IDT

获取价格

Standard SRAM, 8KX8, 55ns, CMOS, CDIP28
IDT7164S55DM IDT

获取价格

Standard SRAM, 8KX8, 55ns, CMOS, CDIP28
IDT7164S55EB ETC

获取价格

x8 SRAM
IDT7164S55L28B ETC

获取价格

x8 SRAM