5秒后页面跳转
IDT7164LL20YG PDF预览

IDT7164LL20YG

更新时间: 2024-11-14 21:21:31
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
11页 108K
描述
Standard SRAM, 8KX8, 19ns, CMOS, PDSO28, 0.300 INCH, ROHS COMPLIANT, SOJ-28

IDT7164LL20YG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOJ
包装说明:0.300 INCH, ROHS COMPLIANT, SOJ-28针数:28
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.63
最长访问时间:19 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-J28JESD-609代码:e3
长度:17.9324 mm内存密度:65536 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端子数量:28
字数:8192 words字数代码:8000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:8KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOJ封装等效代码:SOJ28,.34
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:5 V认证状态:Not Qualified
座面最大高度:3.556 mm最大待机电流:0.00006 A
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.15 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:MATTE TIN
端子形式:J BEND端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:7.5184 mmBase Number Matches:1

IDT7164LL20YG 数据手册

 浏览型号IDT7164LL20YG的Datasheet PDF文件第2页浏览型号IDT7164LL20YG的Datasheet PDF文件第3页浏览型号IDT7164LL20YG的Datasheet PDF文件第4页浏览型号IDT7164LL20YG的Datasheet PDF文件第5页浏览型号IDT7164LL20YG的Datasheet PDF文件第6页浏览型号IDT7164LL20YG的Datasheet PDF文件第7页 
IDT7164S/LS  
IDT7164L/LL  
CMOS Static RAM  
64K (8K x 8-Bit)  
Features  
Description  
High-speed address/chip select access time  
TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8K  
x8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOS  
technology.  
Military:20/25/35/45/55/70/85/100ns(max.)  
Industrial:25/35ns (max.)  
– Commercial:15/20/25/35ns(max.)  
Low power consumption  
Battery backup operation – 2V data retention voltage  
(L Version only)  
Produced with advanced CMOS high-performance  
technology  
Inputs and outputs directly TTL-compatible  
Three-state outputs  
Address access times as fast as 15ns are available and the circuit  
offers a reduced power standby mode. When CS1 goes HIGH or CS2  
goes LOW, the circuit will automatically go to, and remain in, a low-  
power stand by mode. The low-power (L) version also offers a battery  
backup data retention capability at power supply levels as low as 2V.  
All inputs and outputs of the IDT7164 are TTL-compatible and  
operation is from a single 5V supply, simplifying system designs. Fully  
static asynchronous circuitry is used, requiring no clocks or refreshing  
for operation.  
Available in 28-pin DIP, CERDIP and SOJ  
Military product compliant to MIL-STD-883, Class B  
TheIDT7164ispackagedina28-pin300milDIPandSOJ anda28-  
pin600milCERDIP.  
Militarygradeproductismanufacturedincompliancewiththelatest  
revision of MIL-STD-883, Class B, making it ideally suited to military  
temperature applications demandingthe highestlevelofperformance  
and reliability.  
Functional Block Diagram  
A0  
VCC  
GND  
65,536 BIT  
MEMORY ARRAY  
ADDRESS  
DECODER  
A
12  
7
0
I/O  
0
7
I/O CONTROL  
I/O  
CS1  
CS2  
OE  
CONTROL  
LOGIC  
2967 drw 01  
WE  
FEBRUARY 2007  
1
DSC-2967/14  
©2007 IntegratedDeviceTechnology,Inc.  

与IDT7164LL20YG相关器件

型号 品牌 获取价格 描述 数据表
IDT7164LL25PG IDT

获取价格

Standard SRAM, 8KX8, 25ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28
IDT7164LL25PGI IDT

获取价格

Standard SRAM, 8KX8, 25ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28
IDT7164LL25TPG IDT

获取价格

Standard SRAM, 8KX8, 25ns, CMOS, PDIP28
IDT7164LL35TPG IDT

获取价格

Standard SRAM, 8KX8, 35ns, CMOS, PDIP28
IDT7164LL35YGI IDT

获取价格

Standard SRAM, 8KX8, 35ns, CMOS, PDSO28, 0.300 INCH, ROHS COMPLIANT, PLASTIC, SOJ-28
IDT7164LRT ETC

获取价格

x8 SRAM
IDT7164LS IDT

获取价格

CMOS Static RAM 64K (8K x 8-Bit)
IDT7164LS15TPG IDT

获取价格

Standard SRAM, 8KX8, 15ns, CMOS, PDIP28, 0.300 INCH, ROHS COMPLIANT, PLASTIC, DIP-28
IDT7164LS15YG IDT

获取价格

Standard SRAM, 8KX8, 15ns, CMOS, PDSO28, 0.300 INCH, ROHS COMPLIANT, SOJ-28
IDT7164LS20PGI IDT

获取价格

Standard SRAM, 8KX8, 20ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28