5秒后页面跳转
IDT7164LS20YG PDF预览

IDT7164LS20YG

更新时间: 2024-11-14 21:21:31
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
11页 108K
描述
Standard SRAM, 8KX8, 19ns, CMOS, PDSO28, 0.300 INCH, ROHS COMPLIANT, SOJ-28

IDT7164LS20YG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOJ
包装说明:0.300 INCH, ROHS COMPLIANT, SOJ-28针数:28
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.09
最长访问时间:19 nsI/O 类型:COMMON
JESD-30 代码:R-PDSO-J28JESD-609代码:e3
长度:17.9324 mm内存密度:65536 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端子数量:28
字数:8192 words字数代码:8000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:8KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOJ封装等效代码:SOJ28,.34
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:5 V认证状态:Not Qualified
座面最大高度:3.556 mm最大待机电流:0.00006 A
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.17 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:MATTE TIN
端子形式:J BEND端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:7.5184 mmBase Number Matches:1

IDT7164LS20YG 数据手册

 浏览型号IDT7164LS20YG的Datasheet PDF文件第2页浏览型号IDT7164LS20YG的Datasheet PDF文件第3页浏览型号IDT7164LS20YG的Datasheet PDF文件第4页浏览型号IDT7164LS20YG的Datasheet PDF文件第5页浏览型号IDT7164LS20YG的Datasheet PDF文件第6页浏览型号IDT7164LS20YG的Datasheet PDF文件第7页 
IDT7164S/LS  
IDT7164L/LL  
CMOS Static RAM  
64K (8K x 8-Bit)  
Features  
Description  
High-speed address/chip select access time  
TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8K  
x8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOS  
technology.  
Military:20/25/35/45/55/70/85/100ns(max.)  
Industrial:25/35ns (max.)  
– Commercial:15/20/25/35ns(max.)  
Low power consumption  
Battery backup operation – 2V data retention voltage  
(L Version only)  
Produced with advanced CMOS high-performance  
technology  
Inputs and outputs directly TTL-compatible  
Three-state outputs  
Address access times as fast as 15ns are available and the circuit  
offers a reduced power standby mode. When CS1 goes HIGH or CS2  
goes LOW, the circuit will automatically go to, and remain in, a low-  
power stand by mode. The low-power (L) version also offers a battery  
backup data retention capability at power supply levels as low as 2V.  
All inputs and outputs of the IDT7164 are TTL-compatible and  
operation is from a single 5V supply, simplifying system designs. Fully  
static asynchronous circuitry is used, requiring no clocks or refreshing  
for operation.  
Available in 28-pin DIP, CERDIP and SOJ  
Military product compliant to MIL-STD-883, Class B  
TheIDT7164ispackagedina28-pin300milDIPandSOJ anda28-  
pin600milCERDIP.  
Militarygradeproductismanufacturedincompliancewiththelatest  
revision of MIL-STD-883, Class B, making it ideally suited to military  
temperature applications demandingthe highestlevelofperformance  
and reliability.  
Functional Block Diagram  
A0  
VCC  
GND  
65,536 BIT  
MEMORY ARRAY  
ADDRESS  
DECODER  
A
12  
7
0
I/O  
0
7
I/O CONTROL  
I/O  
CS1  
CS2  
OE  
CONTROL  
LOGIC  
2967 drw 01  
WE  
FEBRUARY 2007  
1
DSC-2967/14  
©2007 IntegratedDeviceTechnology,Inc.  

与IDT7164LS20YG相关器件

型号 品牌 获取价格 描述 数据表
IDT7164LS20YGI IDT

获取价格

Standard SRAM, 8KX8, 20ns, CMOS, PDSO28, 0.300 INCH, ROHS COMPLIANT, PLASTIC, SOJ-28
IDT7164LS25YGI IDT

获取价格

Standard SRAM, 8KX8, 25ns, CMOS, PDSO28, 0.300 INCH, ROHS COMPLIANT, PLASTIC, SOJ-28
IDT7164LS35PG IDT

获取价格

Standard SRAM, 8KX8, 35ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28
IDT7164LS35PGI IDT

获取价格

Standard SRAM, 8KX8, 35ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28
IDT7164LS35YGI IDT

获取价格

Standard SRAM, 8KX8, 35ns, CMOS, PDSO28, 0.300 INCH, ROHS COMPLIANT, PLASTIC, SOJ-28
IDT7164S IDT

获取价格

CMOS STATIC RAM 64K (8K x 8-BIT)
IDT7164S_07 IDT

获取价格

CMOS Static RAM 64K (8K x 8-Bit)
IDT7164S100DB ETC

获取价格

SRAM|8KX8|CMOS|DIP|28PIN|CERAMIC
IDT7164S100DM IDT

获取价格

Standard SRAM, 8KX8, 100ns, CMOS, CDIP28
IDT7164S100EB IDT

获取价格

Standard SRAM, 8KX8, 100ns, CMOS, CDFP28, CERPACK-28