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IDT7164LL35TPG PDF预览

IDT7164LL35TPG

更新时间: 2024-11-14 21:21:31
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
11页 108K
描述
Standard SRAM, 8KX8, 35ns, CMOS, PDIP28

IDT7164LL35TPG 技术参数

是否Rohs认证:符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:N最长访问时间:35 ns
I/O 类型:COMMONJESD-30 代码:R-PDIP-T28
JESD-609代码:e3内存密度:65536 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
端子数量:28字数:8192 words
字数代码:8000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:8KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP28,.3封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:PARALLEL
电源:5 V认证状态:Not Qualified
最大待机电流:0.00006 A最小待机电流:2 V
子类别:SRAMs最大压摆率:0.13 mA
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:COMMERCIAL
端子面层:Matte Tin (Sn) - annealed端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
Base Number Matches:1

IDT7164LL35TPG 数据手册

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IDT7164S/LS  
IDT7164L/LL  
CMOS Static RAM  
64K (8K x 8-Bit)  
Features  
Description  
High-speed address/chip select access time  
TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8K  
x8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOS  
technology.  
Military:20/25/35/45/55/70/85/100ns(max.)  
Industrial:25/35ns (max.)  
– Commercial:15/20/25/35ns(max.)  
Low power consumption  
Battery backup operation – 2V data retention voltage  
(L Version only)  
Produced with advanced CMOS high-performance  
technology  
Inputs and outputs directly TTL-compatible  
Three-state outputs  
Address access times as fast as 15ns are available and the circuit  
offers a reduced power standby mode. When CS1 goes HIGH or CS2  
goes LOW, the circuit will automatically go to, and remain in, a low-  
power stand by mode. The low-power (L) version also offers a battery  
backup data retention capability at power supply levels as low as 2V.  
All inputs and outputs of the IDT7164 are TTL-compatible and  
operation is from a single 5V supply, simplifying system designs. Fully  
static asynchronous circuitry is used, requiring no clocks or refreshing  
for operation.  
Available in 28-pin DIP, CERDIP and SOJ  
Military product compliant to MIL-STD-883, Class B  
TheIDT7164ispackagedina28-pin300milDIPandSOJ anda28-  
pin600milCERDIP.  
Militarygradeproductismanufacturedincompliancewiththelatest  
revision of MIL-STD-883, Class B, making it ideally suited to military  
temperature applications demandingthe highestlevelofperformance  
and reliability.  
Functional Block Diagram  
A0  
VCC  
GND  
65,536 BIT  
MEMORY ARRAY  
ADDRESS  
DECODER  
A
12  
7
0
I/O  
0
7
I/O CONTROL  
I/O  
CS1  
CS2  
OE  
CONTROL  
LOGIC  
2967 drw 01  
WE  
FEBRUARY 2007  
1
DSC-2967/14  
©2007 IntegratedDeviceTechnology,Inc.  

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