Datasheet > 存储 > SRAM> IDT7140SA25TF

IDT7140SA25TF

更新时间： 2024-11-05 22:38:43

品牌	Logo	应用领域
艾迪悌 - IDT		/
页数	文件大小	规格书
14页	219K
描述
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM

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IDT7140SA25TF 数据手册

IDT7130SA/LA

IDT7140SA/LA

HIGH-SPEED

1K x 8 DUAL-PORT

STATIC RAM

Integrated Device Technology, Inc.

FEATURES

• High-speed access

—Military: 25/35/55/100ns (max.)

—Commercial: 25/35/55/100ns (max.)

—Commercial: 20ns 7130 in PLCC and TQFP

• Low-power operation

—IDT7130/IDT7140SA

—Active: 550mW (typ.)

—Standby: 5mW (typ.)

—IDT7130/IDT7140LA

—Active: 550mW (typ.)

—Standby: 1mW (typ.)

• MASTER IDT7130 easily expands data bus width to

16-or-more-bits using SLAVE IDT7140

• On-chip port arbitration logic (IDT7130 Only)

• BUSY output flag on IDT7130; BUSY input on IDT7140

• Interrupt flags for port-to-port communication

• Fully asynchronous operation from either port

• Battery backup operation–2V data retention (LA only)

• TTL-compatible, single 5V ±10% power supply

• Military product compliant to MIL-STD-883, Class B

• Standard Military Drawing #5962-86875

• Industrial temperature range (–40°C to +85°C) is avail-

able, tested to military electrical specifications

DESCRIPTION

The IDT7130/IDT7140 are high-speed 1K x 8 Dual-Port

Static RAMs. The IDT7130 is designed to be used as a

stand-alone 8-bit Dual-Port RAM or as a "MASTER" Dual-

Port RAM together with the IDT7140 "SLAVE" Dual-Port in

16-bit-or-more word width systems. Using the IDT MAS-

TER/SLAVE Dual-Port RAM approach in 16-or-more-bit

memory system applications results in full-speed, error-free

operation without the need for additional discrete logic.

Both devices provide two independent ports with sepa-

rate control, address, and I/O pins that permit independent

asynchronous access for reads or writes to any location in

memory. An automatic power down feature, controlled by

CE, permits the on chip circuitry of each port to enter a very

low standby power mode.

Fabricated using IDT's CMOS high-performance tech-

nology, these devices typically operate on only 550mW of

power. Low-power (LA) versions offer battery backup data

retention capability, with each Dual-Port typically consum-

ing 200µW from a 2V battery.

The IDT7130/IDT7140 devices are packaged in 48-pin

sidebraze or plastic DIPs, LCCs, or flatpacks, 52-pin PLCC,

and 64-pin TQFP and STQFP. Military grade product is

manufactured in compliance with the latest revision of MIL-

STD-883, Class B, making it ideally suited to military tem-

perature applications demanding the highest level of per-

formance and reliability.

FUNCTIONAL BLOCK DIAGRAM

OER

OEL

CEL

R/WL

CER

R/WR

I/O0L- I/O7L

I/O0R-I/O7R

I/O

Control

I/O

Control

(1,2)

BUSYR

BUSYL

A9L

A0L

A9R

Address

Decoder

MEMORY

ARRAY

Address

Decoder

A0R

NOTES:

ARBITRATION

and

INTERRUPT

LOGIC

1. IDT7130 (MASTER): BUSY is open

drain output and requires pullup

resistor of 270Ω.

CEL

OEL

CER

OER

R/WR

R/WL

IDT7140 (SLAVE): BUSY is input.

2. Open drain output: requires pullup

resistor of 270Ω.

(2)

INTL

INTR

2689 drw 01

The IDT logo is a registered trademark of Integrated Device Technology, Inc.

MILITARY AND COMMERCIAL TEMPERATURE RANGES

OCTOBER 1996

DSC-2689/7

For latest information contact IDT’s web site at www.idt.com or fax-on-demand at 408-492-8391.

6.01

12 3 4 5 6 7...14

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与IDT7140SA25TF相关器件

型号	品牌	获取价格	描述	数据表
IDT7140SA25TFB	IDT	获取价格	HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM
IDT7140SA25TFB8	IDT	获取价格	Multi-Port SRAM, 1KX8, 25ns, CMOS, PQFP64
IDT7140SA25TFG	IDT	获取价格	HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM
IDT7140SA25TFGB	IDT	获取价格	HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM
IDT7140SA25TFGB8	IDT	获取价格	Multi-Port SRAM, 1KX8, 25ns, CMOS, PQFP64
IDT7140SA25TFGI	IDT	获取价格	HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM
IDT7140SA25TFGI8	IDT	获取价格	Multi-Port SRAM, 1KX8, 25ns, CMOS, PQFP64
IDT7140SA25TFI8	IDT	获取价格	Multi-Port SRAM, 1KX8, 25ns, CMOS, PQFP64
IDT7140SA30CB	IDT	获取价格	Multi-Port SRAM, 1KX8, 30ns, CMOS, CDIP48
IDT7140SA30F	IDT	获取价格	Multi-Port SRAM, 1KX8, 30ns, CMOS, CQFP48, QFP-48

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